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BC639 반도체 회로 부품 판매점

High Current Transistors



Motorola  Inc 로고
Motorola Inc
BC639 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Current Transistors
NPN Silicon
COLLECTOR
2
3
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
BC BC BC
Symbol 635 637 639 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
45 60 80 Vdc
45 60 80 Vdc
5.0 Vdc
0.5 Adc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
BC635
BC637
BC639
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
BC635
BC637
BC639
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
V(BR)EBO
ICBO
Min
45
60
80
45
60
80
5.0
Order this document
by BC635/D
BC635
BC637
BC639
1
2
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
Typ Max Unit
Vdc
——
——
——
Vdc
——
——
——
— — Vdc
— 100 nAdc
— 10 µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1


BC639 데이터시트, 핀배열, 회로
BC635 BC637 BC639
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)
(IC = 500 mA, VCE = 2.0 V)
BC635
BC637
BC639
hFE —
25 — —
40 — 250
40 — 160
40 — 160
25 — —
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
— 0.5 Vdc
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
— 1.0 Vdc
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
fT — 200 — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob — 7.0 — pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib — 50 — pF
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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BC639 transistor

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