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Siemens Semiconductor Group |
NPN Silicon Darlington Transistors
q High current gain
q High collector current
BC 617
BC 618
BC 617
BC 618
2
3
1
Type
BC 617
BC 618
Marking
–
Ordering Code
Q62702-C1137
Q62702-C1138
Pin Configuration
123
CBE
Package1)
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 66 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case2)
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
BC 617
BC 618
40 55
50 80
12
500
800
100
200
625
150
– 65 … + 150
Unit
V
mA
mW
˚C
Rth JA
Rth JC
≤ 200
≤ 135
K/W
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91
BC 617
BC 618
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BC 617
BC 618
Collector-base breakdown voltage
IC = 100 µA
BC 617
BC 618
Emitter-base breakdown voltage
IE = 10 µA
Collector cutoff current
VCB = 40 V
VCB = 60 V
VCB = 40 V, TA = 150 ˚C
VCB = 60 V, TA = 150 ˚C
BC 617
BC 618
BC 617
BC 618
Emitter cutoff current
VEB = 4 V
DC current gain
IC = 100 µA; VCE = 5 V
IC = 10 mA; VCE = 5 V1)
IC = 200 mA; VCE = 5 V1)
IC = 1000 mA; VCE = 5 V1)
BC 617
BC 618
BC 617
BC 618
BC 617
BC 618
BC 617
BC 618
Collector-emitter saturation voltage1)
IC = 200 mA; IB = 0.2 mA
Base-emitter saturation voltage1)
IC = 200 mA; IB = 0.2 mA
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V(BR)CB0
40
55
V(BR)EB0
50
80
12
–
–
–
–
–
ICB0
––
––
––
––
IEB0 – –
hFE
VCEsat
4000
2000
10000
4000
20000
10000
10000
4000
–
–
–
–
–
–
–
–
––
VBEsat
–
–
V
–
–
–
–
–
100 nA
100 nA
10 µA
10 µA
100 nA
–
–
–
–
–
70000
50000
–
–
1.1 V
1.6
1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
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