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Diodes Incorporated |
BC857BS
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
· Ideally Suited for Automatic Insertion
· For Switching and AF Amplifier Applications
· Ultra-Small Surface Mount Package
A
BC
Mechanical Data
· Case: SOT-363, Molded Plastic
· Case Material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: K3W (See Page 3)
· Weight: 0.006 grams
H
K
J
DF
C2 B1 E1
E2 B2 C1
TOP VIEW
L
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
M H 1.80 2.20
J ¾ 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
a 0° 8°
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1)
Peak Collector Current (Note 1)
Peak Base Current (Note 1)
Power Dissipation at TSB = 50°C (Note 1)
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Pd
Tj, TSTG
Value
-50
-45
-5.0
-100
-200
-200
200
-55 to +125
Unit
V
V
V
mA
mA
mA
mW
°C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30373 Rev. 1 - 2
1 of 3
www.diodes.com
BC857BS
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
DC Current Gain (Note 2)
Thermal Resistance, Junction to Ambient Air (Note 1)
Collector-Emitter Saturation Voltage (Note 2)
Base-Emitter Saturation Voltage (Note 2)
Base-Emitter Voltage (Note 2)
Collector Cutoff Current
Emitter Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Symbol
hFE
RqJA
VCE(SAT)
VBE(SAT)
VBE
ICBO
ICBO
IEBO
fT
CCBO
CEBO
Min
220
—
—
—
-580
—
—
100
—
—
Typ
—
—
—
—
-700
-665
—
—
—
—
—
11
Max
475
625
-100
-400
—
-750
-15
-4.0
-100
—
3
—
Unit
—
°C/W
mV
mV
mV
nA
µA
nA
MHz
pF
pF
Test Condition
VCE = -5.0V, IC = -2.0mA
Note 1
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
VCE = -5.0V, IC = -2.0mA
VCB = -30V, IE = 0
VCB = -30V, Tj = 150°C
VEB = -5.0V, IC = 0
VCE = -5.0V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
VEB = -0.5V, f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
250
200
150
(see Note 1)
1000
TA = 150°C
100
TA = 25°C
TA = -50°C
VCE = -5V
100
10
50
0
0
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
0.5
IC / IB = 20
200
0.4
1
1
10 100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
TA = 25°C
0.3
0.2
TA = 150°C
0.1 TA = 25°C
100
VCE = -5V
0
0.1
TA = -50°C
1 10
100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
10
1
10 100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
DS30373 Rev. 1 - 2
2 of 3
www.diodes.com
BC857BS
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