파트넘버.co.kr BC587BS 데이터시트 PDF


BC587BS 반도체 회로 부품 판매점

DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR



Diodes Incorporated 로고
Diodes Incorporated
BC587BS 데이터시트, 핀배열, 회로
BC857BS
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
· Ideally Suited for Automatic Insertion
· For Switching and AF Amplifier Applications
· Ultra-Small Surface Mount Package
A
BC
Mechanical Data
· Case: SOT-363, Molded Plastic
· Case Material - UL Flammability Rating
Classification 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: K3W (See Page 3)
· Weight: 0.006 grams
H
K
J
DF
C2 B1 E1
E2 B2 C1
TOP VIEW
L
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
M H 1.80 2.20
J ¾ 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
a 0°
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1)
Peak Collector Current (Note 1)
Peak Base Current (Note 1)
Power Dissipation at TSB = 50°C (Note 1)
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Pd
Tj, TSTG
Value
-50
-45
-5.0
-100
-200
-200
200
-55 to +125
Unit
V
V
V
mA
mA
mA
mW
°C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30373 Rev. 1 - 2
1 of 3
www.diodes.com
BC857BS


BC587BS 데이터시트, 핀배열, 회로
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
DC Current Gain (Note 2)
Thermal Resistance, Junction to Ambient Air (Note 1)
Collector-Emitter Saturation Voltage (Note 2)
Base-Emitter Saturation Voltage (Note 2)
Base-Emitter Voltage (Note 2)
Collector Cutoff Current
Emitter Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Symbol
hFE
RqJA
VCE(SAT)
VBE(SAT)
VBE
ICBO
ICBO
IEBO
fT
CCBO
CEBO
Min
220
-580
100
Typ
-700
-665
11
Max
475
625
-100
-400
-750
-15
-4.0
-100
3
Unit
°C/W
mV
mV
mV
nA
µA
nA
MHz
pF
pF
Test Condition
VCE = -5.0V, IC = -2.0mA
Note 1
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
VCE = -5.0V, IC = -2.0mA
VCB = -30V, IE = 0
VCB = -30V, Tj = 150°C
VEB = -5.0V, IC = 0
VCE = -5.0V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
VEB = -0.5V, f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
250
200
150
(see Note 1)
1000
TA = 150°C
100
TA = 25°C
TA = -50°C
VCE = -5V
100
10
50
0
0
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
0.5
IC / IB = 20
200
0.4
1
1
10 100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
TA = 25°C
0.3
0.2
TA = 150°C
0.1 TA = 25°C
100
VCE = -5V
0
0.1
TA = -50°C
1 10
100 1000
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
10
1
10 100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
DS30373 Rev. 1 - 2
2 of 3
www.diodes.com
BC857BS




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BC587BS transistor

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BC587BS

DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR - Diodes Incorporated