파트넘버.co.kr BC558 데이터시트 PDF


BC558 반도체 회로 부품 판매점

Small Signal Transistors (PNP)



General Semiconductor 로고
General Semiconductor
BC558 데이터시트, 핀배열, 회로
BC556 THRU BC559
Small Signal Transistors (PNP)
TO-92
.181 (4.6)
.142 (3.6)
max..022 (0.55)
.098 (2.5)
CE
B
Dimensions in inches and (millimeters)
FEATURES
PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
These transistors are subdivided into
three groups A, B and C according to
their current gain. The type BC556 is avail-
able in groups A and B, however, the types
BC557 and BC558 can be supplied in all three
groups. The BC559 is a low-noise type available
in all three groups. As complementary types, the
NPN transistors BC546 … BC549 are recommended.
On special request, these transistors are also manufac-
tured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Collector-Base Voltage
BC556
BC557
BC558, BC559
–VCBO
–VCBO
–VCBO
80
50
30
Collector-Emitter Voltage
BC556
BC557
BC558, BC559
–VCES
–VCES
–VCES
80
50
30
Collector-Emitter Voltage
BC556
BC557
BC558, BC559
–VCEO
–VCEO
–VCEO
65
45
30
Emitter-Base Voltage
–VEBO
5
Collector Current
–IC 100
Peak Collector Current
–ICM
200
Peak Base Current
–IBM
200
Peak Emitter Current
IEM 200
Power Dissipation at Tamb = 25 °C
Ptot 5001)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
°C
°C
4/98


BC558 데이터시트, 핀배열, 회로
BC556 THRU BC559
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
h-Parameters
at –VCE = 5 V, –IC = 2 mA, f = 1 kHz
Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
– 220 –
– 330 –
– 600 –
1.6 2.7 4.5
3.2 4.5 8.5
6 8.7 15
– 18 30
– 30 60
– 60 110
– 1.5 · 10–4
2 · 10–4
3 · 10–4
DC Current Gain
at –VCE = 5 V, –IC = 10 µA
Current Gain Group A
B
C
at –VCE = 5 V, –IC = 2 mA
Current Gain Group A
B
C
at –VCE = 5 V, –IC = 100 mA
Current Gain Group A
B
C
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
– 90 –
– 150 –
– 270 –
110 180 220
200 290 450
420 500 800
– 120 –
– 200 –
– 400 –
Thermal Resistance Junction to Ambient Air
RthJA
2501)
Collector Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
–VCEsat
–VCEsat
80 300
250 650
Base Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
–VBEsat
–VBEsat
700 –
900 –
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 10 mA
–VBE 600 660 750
–VBE
800
Collector-Emitter Cutoff Current
at –VCE = 80 V
at –VCE = 50 V
at –VCE = 30 V
at –VCE = 80 V, Tj = 125 °C
at –VCE = 50 V, Tj = 125 °C
at –VCE = 30 V, Tj = 125 °C
BC556
BC557
BC558
BC556
BC557
BC558, BC559
–ICES
–ICES
–ICES
–ICES
–ICES
–ICES
0.2 15
0.2 15
0.2 15
–4
–4
–4
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
k
k
k
µS
µS
µS
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA




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