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General Semiconductor |
BC556 THRU BC559
Small Signal Transistors (PNP)
TO-92
.181 (4.6)
.142 (3.6)
max.∅ .022 (0.55)
.098 (2.5)
CE
B
Dimensions in inches and (millimeters)
FEATURES
♦ PNP Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
♦ These transistors are subdivided into
three groups A, B and C according to
their current gain. The type BC556 is avail-
able in groups A and B, however, the types
BC557 and BC558 can be supplied in all three
groups. The BC559 is a low-noise type available
in all three groups. As complementary types, the
NPN transistors BC546 … BC549 are recommended.
♦ On special request, these transistors are also manufac-
tured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Collector-Base Voltage
BC556
BC557
BC558, BC559
–VCBO
–VCBO
–VCBO
80
50
30
Collector-Emitter Voltage
BC556
BC557
BC558, BC559
–VCES
–VCES
–VCES
80
50
30
Collector-Emitter Voltage
BC556
BC557
BC558, BC559
–VCEO
–VCEO
–VCEO
65
45
30
Emitter-Base Voltage
–VEBO
5
Collector Current
–IC 100
Peak Collector Current
–ICM
200
Peak Base Current
–IBM
200
Peak Emitter Current
IEM 200
Power Dissipation at Tamb = 25 °C
Ptot 5001)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
°C
°C
4/98
BC556 THRU BC559
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
h-Parameters
at –VCE = 5 V, –IC = 2 mA, f = 1 kHz
Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
– 220 –
– 330 –
– 600 –
1.6 2.7 4.5
3.2 4.5 8.5
6 8.7 15
– 18 30
– 30 60
– 60 110
– 1.5 · 10–4 –
–
2 · 10–4
–
–
3 · 10–4
–
DC Current Gain
at –VCE = 5 V, –IC = 10 µA
Current Gain Group A
B
C
at –VCE = 5 V, –IC = 2 mA
Current Gain Group A
B
C
at –VCE = 5 V, –IC = 100 mA
Current Gain Group A
B
C
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
– 90 –
– 150 –
– 270 –
110 180 220
200 290 450
420 500 800
– 120 –
– 200 –
– 400 –
Thermal Resistance Junction to Ambient Air
RthJA
–
–
2501)
Collector Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
–VCEsat
–VCEsat
–
–
80 300
250 650
Base Saturation Voltage
at –IC = 10 mA, –IB = 0.5 mA
at –IC = 100 mA, –IB = 5 mA
–VBEsat
–VBEsat
–
–
700 –
900 –
Base-Emitter Voltage
at –VCE = 5 V, –IC = 2 mA
at –VCE = 5 V, –IC = 10 mA
–VBE 600 660 750
–VBE
–
–
800
Collector-Emitter Cutoff Current
at –VCE = 80 V
at –VCE = 50 V
at –VCE = 30 V
at –VCE = 80 V, Tj = 125 °C
at –VCE = 50 V, Tj = 125 °C
at –VCE = 30 V, Tj = 125 °C
BC556
BC557
BC558
BC556
BC557
BC558, BC559
–ICES
–ICES
–ICES
–ICES
–ICES
–ICES
–
–
–
–
–
–
0.2 15
0.2 15
0.2 15
–4
–4
–4
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
–
–
–
kΩ
kΩ
kΩ
µS
µS
µS
–
–
–
–
–
–
–
–
–
–
–
–
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA
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