|
Diotec Semiconductor |
BC 556 ... BC 559
PNP
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
PNP
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
500 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCB0
- VEB0
Ptot
- IC
Tj
TS
BC 556
65 V
80 V
Grenzwerte (TA = 25/C)
BC 557 BC 558/559
45 V
30 V
50 V
30 V
5V
500 mW 1)
100 mA
150/C
- 55…+ 150/C
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 2 mA
hFE
h-Parameters at - VCE = 5V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Stromverstärkung
hfe
Input impedance – Eingangsimpedanz
Output admittance – Ausg.-Leitwert
Reverse voltage transfer ratio
Spannungsrückwirkung
hie
hoe
hre
Collector saturation voltage – Kollektor-Sättigungsspg.
- IC = 100 mA, - IB = 5 mA
-VCEsat
Group A
110...220
typ. 220
1.6...4.5 kS
18 < 30 :S
typ.1.5 *10-4
–
Kennwerte (Tj = 25/C)
Group B
Group C
200...460
420...800
typ. 330
typ. 600
3.2...8.5 kS 6...15 kS
30 < 60 :S 60 < 110 :S
typ. 2 *10-4 typ. 3 *10-4
– 300 mV
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
8 01.11.2003
General Purpose Transistors
Characteristics (Tj = 25/C)
Base saturation voltage – Basis-Sättigungsspannung
- IC = 100 mA, - IB = 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
- VBEsat
- VCE = 5 V, - IC = 2 mA
- VBE
Collector-Emitter cutoff current – Kollektorreststrom
- VCE = 60 V
BC 556
- VCE = 40 V
BC 557
- VCE = 25 V
BC 558
- VCE = 25 V
BC 559
Gain-Bandwidth Product – Transitfrequenz
- ICE0
- ICE0
- ICE0
- ICE0
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, f = 1 MHz
Noise figure – Rauschzahl
CEB0
- VCE = 5 V, - IC = 200 :A
RG = 2 kS f = 1 kHz,
)f = 200 Hz
BC 556...
BC 558
BC 559
F
F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 556 ... BC 559
Kennwerte (Tj = 25/C)
Min. Typ. Max.
– – 1V
580 mV 660 mV 700 mV
– – 0.1 :A
– – 0.1 :A
– – 0.1 :A
– – 0.1 :A
150 MHz
–
–
– – 6 pF
– 9 pF –
– 2 dB 10 dB
– 1 dB 4 dB
RthA 200 K/W 1)
BC 546 ... BC 549
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 556A
BC 557A
BC 558A
BC 556B
BC 557B
BC 558B
BC 559B
BC 557C
BC 558C
BC 559C
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
9
|