|
|
PDF BC549B Data sheet ( Hoja de datos )
| Número de pieza | BC549B | |
| Descripción | Si-Epitaxial PlanarTransistors | |
| Fabricantes | Diotec Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BC549B (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
BC 546 ... BC 549
NPN
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
NPN
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
500 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Emitter-voltage
B shorted
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCES
VCB0
VEB0
Ptot
IC
ICM
IBM
- IEM
Tj
TS
BC 546
65 V
85 V
80 V
6V
Grenzwerte (TA = 25/C)
BC 547 BC 548/549
45 V
30 V
50 V
30 V
50 V
30 V
6V 5V
500 mW 1)
100 mA
200 mA
200 mA
200 mA
150/C
- 65…+ 150/C
Characteristics, Tj = 25/C
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 :A
hFE
VCE = 5 V, IC = 2 mA
hFE
VCE = 5 V, IC = 100 mA
hFE
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
Small signal current gain – Stromverst.
hfe
Input impedance – Eingangsimpedanz
hie
Output admittance – Ausgangsleitwert
hoe
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
Group A
Kennwerte, Tj = 25/C
Group B
Group C
typ. 90
110...220
typ. 120
typ. 150
200...450
typ. 200
typ. 270
420...800
typ.400
typ. 220
1.6...4.5 kS
18 < 30 :S
typ.1.5 *10-4
typ. 330
3.2...8.5 kS
30 < 60 :S
typ. 2 *10-4
typ. 600
6...15 kS
60 < 110 :S
typ. 3 *10-4
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
6 01.11.2003
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC549B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BC549 | NPN general purpose transistors |  NXP Semiconductors |
| BC549 | 30V, 0.1A, NPN EPITAXIAL SILICON TRANSISTOR |  Fairchild Semiconductor |
| BC549 | NPN Silicon Transistors |  Siemens Semiconductor Group |
| BC549 | Small Signal Transistors (NPN) |  General Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |