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BC547 반도체 회로 부품 판매점

Small Signal Transistors (NPN)



General Semiconductor 로고
General Semiconductor
BC547 데이터시트, 핀배열, 회로
BC546 THRU BC549
Small Signal Transistors (NPN)
TO-92
.181 (4.6)
.142 (3.6)
max..022 (0.55)
.098 (2.5)
CE
B
Dimensions in inches and (millimeters)
FEATURES
NPN Silicon Epitaxial Planar Transistors
These transistors are subdivided into three groups
A, B and C according to their current gain. The type
BC546 is available in groups A and B, how-
ever, the types BC547 and BC548 can be
supplied in all three groups. The BC549 is a
low-noise type and available in groups B and
C. As complementary types, the PNP transis-
tors BC556 … BC559 are recommended.
On special request, these transistors are also
manufactured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Collector-Base Voltage
BC546
BC547
BC548, BC549
VCBO
VCBO
VCBO
80
50
30
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at Tamb = 25 °C
BC546
BC547
BC548, BC549
BC546
BC547
BC548, BC549
BC546, BC547
BC548, BC549
VCES
VCES
VCES
VCEO
VCEO
VCEO
VEBO
VEBO
IC
ICM
IBM
–IEM
Ptot
80
50
30
65
45
30
6
5
100
200
200
200
5001)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Unit
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
°C
°C
4/98


BC547 데이터시트, 핀배열, 회로
BC546 THRU BC549
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
h-Parameters at VCE = 5 V, IC = 2 mA,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance Current Gain Group A
B
C
Output Admittance Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
1.6
3.2
6
DC Current Gain
at VCE = 5 V, IC = 10µA
Current Gain Group A
B
C
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
at VCE = 5 V, IC = 100 mA
Current Gain Group A
B
C
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
110
200
420
Thermal Resistance Junction to Ambient Air
Collector Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base-Emitter Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 mA
RthJA
VCEsat
VCEsat
VBEsat
VBEsat
VBE
VBE
580
Collector-Emitter Cutoff Current
at VCE = 80 V
at VCE = 50 V
BC546
BC547
ICES
ICES
at VCE = 30 V
BC548, BC549 ICES
at VCE = 80 V, Tj = 125 °C
at VCE = 50 V, Tj = 125 °C
BC546
BC547
ICES
ICES
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Typ. Max.
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10–4
2 · 10–4
3 · 10–4
4.5
8.5
15
30
60
110
90 –
150 –
270 –
180 220
290 450
500 800
120 –
200 –
400 –
– 2501)
80 200
200 600
700 –
900 –
660 700
– 720
0.2 15
0.2 15
0.2 15
–4
–4
Unit
k
k
k
µS
µS
µS
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA




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