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PDF BC516 Data sheet ( Hoja de datos )
| Número de pieza | BC516 | |
| Descripción | PNP Darlington Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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BC516
PNP Darlington Transistor
• This device is designed for applications reguiring extremely high
current gain at currents to 1mA.
• Sourced from process 61.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
PD
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Total Power Dissipation TA = 25°C
Operating and Storage Junction Temperature Range
1 TO-92
1. Collector 2. Base 3. Emitter
Value
30
40
10
1
625
-55 ~ +150
Units
V
V
V
A
mW
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
VCEO
VCBO
VEBO
ICBO
hFE
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
IC = 2mA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 30V, IE = 0
IC = 20mA, VCE = 2V
30
40
10
30,00
0
V
V
V
100 nA
VCE(sat)
VBE(on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product (2)
IC = 100mA, IB = 0.1mA
IC = 10mA, VCE = 5V
IC = 10mA, VCE = 5V, f = 100MHz
1V
1.4 V
200 MHZ
NOTES:
1. Pulse Test Pulse Width ≤ 2%
2. fT = IhfeI · ftest
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Max.
200
83.3
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BC516.PDF ] | |
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