BC447 반도체 회로 부품 판매점
High Voltage Transistors
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 ON Semiconductor |
BC447, BC449, BC449A
High Voltage Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC447
BC449, BC449A
Collector-Base Voltage
BC447
BC449, BC449A
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Moisture Sensitivity Level (MSL)
Electrostatic Discharge (ESD)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
80
100
80
100
5.0
300
625
5.0
1.5
12
-55 to
+150
MSL: 1
NA
Symbol
RθJA
RθJC
Max
200
83.3
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
1
23
CASE 29
TO-92
STYLE 17
MARKING DIAGRAM
BC
44xx
YWW
BC44xx = Specific Device Code
xx = 7, 9 or 9A
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
BC447
TO-92
5000 Units/Box
BC449
TO-92
5000 Units/Box
BC449A
TO-92
5000 Units/Box
© Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 2
1
Publication Order Number:
BC447/D
BC447, BC449, BC449A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
BC447
BC449, BC449A
V(BR)CEO
Collector - Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
BC447
BC449, BC449A
V(BR)CBO
Emitter - Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS (Note 1)
BC447
BC449, BC449A
V(BR)EBO
ICBO
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
BC447, BC449
BC449A
BC447, BC449
BC449A
BC447, BC449
BC449A
hFE
Collector - Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Base - Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
Base - Emitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc) (Note 1)
DYNAMIC CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
Current - Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2%
fT
Min
80
100
80
100
5.0
-
-
50
120
50
100
50
60
-
-
0.55
-
100
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
0.125
0.85
-
0.76
200
Max
-
-
-
-
-
100
100
460
220
-
-
-
-
0.25
-
0.7
1.2
-
Unit
Vdc
Vdc
Vdc
nAdc
-
Vdc
Vdc
Vdc
MHz
http://onsemi.com
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BC447 transistor
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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