BC351 반도체 회로 부품 판매점
PNP SILICON TRANSISTOR
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 Micro Electronics |
BC 337 / BC 338
NPN
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
NPN
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCB0
VEB0
Ptot
IC
Tj
TS
Grenzwerte (TA = 25/C)
BC 337
BC 338
45 V
25 V
50 V
30 V
5V
625 mW 1)
800 mA
150/C
- 55…+ 150/C
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis
Group -16 hFE
VCE = 1 V, IC = 100 mA
Group -25 hFE
Group -40 hFE
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 40 V
VCE = 20 V
VCE = 40 V, Tj = 125/C
VCE = 20 V, Tj = 125/C
BC 337
BC 338
BC 337
BC 338
ICES
ICES
ICES
ICES
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
100 160 250
160 250 400
250 400 630
– – 200 nA
– – 200 nA
– – 10 :A
– – 10 :A
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
4 01.11.2003
General Purpose Transistors
Characteristics (Tj = 25/C)
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
IC = 10 mA
BC 337
BC 338
IC = 0.1 mA
BC 337
BC 338
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
V(BR)CES
V(BR)CES
V(BR)CES
V(BR)CES
IE = 10 :A
V(BR)EB0
Collector saturation volt. – Kollektor-Sättigungsspannung
IC = 500 mA, IB = 50 mA
VCEsat
Base-Emitter voltage – Basis-Emitter-Spannung
VCE = 1 V, IC = 300 mA
Gain-Bandwidth Product – Transitfrequenz
VBE
VCE = 5 V, IC = 10 mA, f = 50 MHz
Collector-Base Cap. – Kollektor-Basis-Kap.
fT
VCB = 10 V, f = 1 MHz
CCB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 337 / BC 338
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
40 V
20 V
50 V
30 V
–
–
–
–
–
–
–
–
5V –
–
– – 0.7 V
– – 1.2 V
– 100 MHz –
– 12 pF –
RthA 200 K/W 1)
BC 327 / BC 328
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
BC 337-16 BC 337-25 BC337-40
BC 338-16 BC 338-25 BC338-40
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
5
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제조업체: Micro Electronics
( micro )
BC351 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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