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BC337-16 반도체 회로 부품 판매점

Amplifier Transistors(NPN Silicon)



ON Semiconductor 로고
ON Semiconductor
BC337-16 데이터시트, 핀배열, 회로
BC337, BC337−16,
BC337−25, BC337−40,
BC338−25
Amplifier Transistors
NPN Silicon
Features
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol BC337 BC338 Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
45 25
50 30
5.0
800
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
W
1.5 mW/°C
12
www.DataSheet4U.com
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
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COLLECTOR
1
2
BASE
3
EMITTER
MARKING
DIAGRAM
BC33
xxxx
YWW
TO−92 (TO−226)
CASE 29
xxxx = Specific Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 4
1
Publication Order Number:
BC337/D


BC337-16 데이터시트, 핀배열, 회로
BC337, BC337−16, BC337−25, BC337−40, BC338−25
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
BC338
BC337
Collector −Emitter Breakdown Voltage
(IC = 100 mA, IE = 0)
BC338
BC337
Emitter −Base Breakdown Voltage
(IE = 10 mA, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 300 mA, VCE = 1.0 V)
BC337
BC338
BC337
BC338
BC337
BC337−16
BC337−25/BC338−25
BC337−40
Base−Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Symbol Min Typ Max Unit
V(BR)CE
O
45
25
Vdc
V(BR)CE
S
50
30
Vdc
V(BR)EB
O
5.0
− Vdc
ICBO
nAdc
− 100
− 100
ICES
nAdc
− 100
− 100
IEBO
− 100 nAdc
hFE
100 − 630
100 − 250
160 − 400
250 − 630
60 −
VBE(on)
− 1.2 Vdc
VCE(sat)
− 0.7 Vdc
Cob − 15 − pF
fT − 210 − MHz
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2 0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02
SINGLE PULSE
SINGLE PULSE
0.01
0.001 0.002
0.005 0.01 0.02
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05 0.1 0.2
0.5 1.0 2.0
t, TIME (SECONDS)
Figure 1. Thermal Response
qJC(t) = (t) qJC
qJC = 100°C/W MAX
qJA(t) = r(t) qJA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
5.0 10 20
50
100
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2




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