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PDF BC337 Data sheet ( Hoja de datos )
| Número de pieza | BC337 | |
| Descripción | NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications | |
| Fabricantes | Semtech Corporation | |
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BC337…BC338
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
These types are subdivided into three groups -16,
-25 and -40, according to their DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj
TS
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
BC337 BC338
50 30
45 25
5
800
1
625
150
- 55 to + 150
Unit
V
V
V
mA
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group -16 hFE
100
-
250
-
-25 hFE
160
-
400
-
-40 hFE
250
-
630
-
at VCE = 1 V, IC = 300 mA
-16 hFE
60
-
-
-
-25 hFE
100
-
-
-
-40 hFE
170
-
-
-
Collector Base Cutoff Current
at VCB = 50 V
at VCB = 30 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter On Voltage
at VCE = 1 V, IC = 300 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 50 MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
BC337
BC338
BC337
BC338
BC337
BC338
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(on)
fT
CCBO
-
-
50
30
45
25
5
-
-
-
-
- 100 nA
- 100
-
-
-
-
V
-
-
-
-
V
- -V
- 0.7 V
- 1.2 V
100 - MHz
12 - pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BC337.PDF ] | |
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