파트넘버.co.kr BC327 데이터시트 PDF


BC327 반도체 회로 부품 판매점

Small Signal Transistors (PNP)



General Semiconductor 로고
General Semiconductor
BC327 데이터시트, 핀배열, 회로
BC327, BC328
Small Signal Transistors (PNP)
TO-92
.181 (4.6)
.142 (3.6)
max..022 (0.55)
.098 (2.5)
CE
B
Dimensions in inches and (millimeters)
FEATURES
PNP Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Espe-
cially suit-able for AF-driver stages and
low-power output stages.
These types are also available subdivided
into three groups -16, -25, and -40, according
to their DC current gain. As complementary
types, the NPN transistors BC337 and BC338 are
recommended.
On special request, these transistors are also
manufactured in the pin configuration TO-18.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Collector-Emitter Voltage
Collector-Emitter Voltage
BC327
BC328
BC327
BC328
–VCES
–VCES
–VCEO
–VCEO
50
30
45
25
Emitter-Base Voltage
–VEBO
5
Collector Current
–IC 800
Peak Collector Current
–ICM
1
Base Current
–IB 100
Power Dissipation at Tamb = 25 °C
Ptot 6251)
Junction Temperature
Tj 150
Storage Temperature Range
TS –65 to +150
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
V
V
V
V
V
mA
A
mA
mW
°C
°C
4/98


BC327 데이터시트, 핀배열, 회로
BC327, BC328
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
DC Current Gain
at –VCE = 1 V, –IC = 100 mA
Current Gain Group-16
-25
-40
at –VCE = 1 V, –IC = 300 mA
Current Gain Group-16
-25
-40
hFE
hFE
hFE
hFE
hFE
hFE
100 160 250
160 250 400
250 400 630
60 130 –
100 200 –
170 320 –
Thermal Resistance Junction to Ambient Air
RthJA
2001)
Collector-Emitter Cutoff Current
at –VCE = 45 V
at –VCE = 25 V
BC327 –ICES
2
100
BC328 –ICES
2
100
at –VCE = 45 V, Tamb = 125 °C
BC327 –ICES
10
at –VCE = 25 V, Tamb = 125 °C
BC328 –ICES
10
Collector-Emitter Breakdown Voltage
at –IC = 10 mA
BC327
BC328
V(BR)CEO
V(BR)CEO
45
25
Collector-Emitter Breakdown Voltage
at –IC = 0.1 mA
BC327
BC328
V(BR)CES
V(BR)CES
50
30
Emitter-Base Breakdown Voltage
at –IE = 0.1 mA
– 5––
V(BR)EBO
Collector Saturation Voltage
at –IC = 500 mA, –IB = 50 mA
–VCEsat
0.7
Base-Emitter Voltage
at –VCE = 1 V, –IC = 300 mA
–VBE
1.2
Gain-Bandwidth Product
fT – 100 –
at –VCE = 5 V, –IC = 10 mA, f = 50 MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHz
CCBO
12 –
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Unit
K/W
nA
nA
µA
µA
V
V
V
V
V
V
V
MHz
pF




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: General Semiconductor

( gs )

BC327 transistor

데이터시트 다운로드
:

[ BC327.PDF ]

[ BC327 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BC320

AMPLIFIER TRANSISTORS - Motorola Semiconductors



BC320

(BC3xx) Transistors - Micro Electronics



BC320

Trans GP BJT PNP 45V 0.8A 3-Pin TO-92 Bulk - New Jersey Semiconductor



BC3200

Silicon-Bridge Rectifiers - Diotec Semiconductor



BC320A

AMPLIFIER TRANSISTORS - Motorola Semiconductors



BC320B

AMPLIFIER TRANSISTORS - Motorola Semiconductors



BC321

AMPLIFIER TRANSISTORS - Motorola Semiconductors



BC321

PNP SILICON PLANAR EPITAXIAL TRANSISTOR - New Jersey Semi-Conductor



BC321

(BC3xx) Transistors - Micro Electronics