파트넘버.co.kr BC327 데이터시트 PDF


BC327 반도체 회로 부품 판매점

Amplifier Transistors(PNP)



Motorola  Inc 로고
Motorola Inc
BC327 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC327/D
Amplifier Transistors
PNP Silicon
COLLECTOR
1
BC327,-16,-25
BC328,-16,-25
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC327 BC328 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–45 –25
–50 –30
–5.0
–800
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watt
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mA, IB = 0)
BC327
BC328
V(BR)CEO
Collector – Emitter Breakdown Voltage
(IC = –100 µA, IE = 0)
BC327
BC328
V(BR)CES
Emitter – Base Breakdown Voltage
(IE = –10 mA, IC = 0)
Collector Cutoff Current
(VCB = –30 V, IE = 0)
(VCB = –20 V, IE = 0)
Collector Cutoff Current
(VCE = –45 V, VBE = 0)
(VCE = –25 V, VBE = 0)
Emitter Cutoff Current
(VEB = –4.0 V, IC = 0)
BC327
BC328
BC327
BC328
V(BR)EBO
ICBO
ICES
IEBO
Min
–45
–25
–50
–30
–5.0
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
Vdc
——
——
Vdc
——
——
— — Vdc
nAdc
— –100
— –100
nAdc
— –100
— –100
–100
nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1


BC327 데이터시트, 핀배열, 회로
BC327,-16,-25 BC328,-16,-25
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –100 mA, VCE = –1.0 V)
(IC = –300 mA, VCE = –1.0 V)
BC327/BC328
hFE —
100 — 630
BC327–16/BC328–16
100 — 250
BC327–25/BC328–25
160 — 400
40 — —
Base–Emitter On Voltage
(IC = –300 mA, VCE = –1.0 V)
VBE(on)
— –1.2 Vdc
Collector – Emitter Saturation Voltage
(IC = –500 mA, IB = –50 mA)
VCE(sat)
— –0.7 Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = –10 V, IE = 0, f = 1.0 MHz)
Cob — 11 — pF
Current – Gain — Bandwidth Product
(IC = –10 mA, VCE = –5.0 V, f = 100 MHz)
fT — 260 — MHz
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2 0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02
SINGLE PULSE
SINGLE PULSE
0.01
0.001 0.002
0.005 0.01 0.02
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05 0.1 0.2
0.5 1.0 2.0
t, TIME (SECONDS)
Figure 1. Thermal Response
θJC(t) = (t) θJC
θJC = 100°C/W MAX
θJA(t) = r(t) θJA
θJA = 375°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
5.0 10 20
50 100
–1000
–100
1.0 s 1.0 ms
dc
TA = 25°C
dc
TC = 25°C
TJ = 135°C
100 µs
–10
–1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
–3.0 –10 –30
VCE, COLLECTOR–EMITTER VOLTAGE
–100
Figure 2. Active Region — Safe Operating Area
1000
100
10
–0.1
VCE = –1.0 V
TA = 25°C
–1.0 –10 –100
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
–1000
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




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BC327 transistor

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