BC307C 반도체 회로 부품 판매점
Amplifier Transistors(PNP)
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 Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC307, B, C BC308C Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–45
–50
–5.0
–100
350
2.8
–25
–30
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0 Watts
8.0 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA 357 °C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector–Emitter Leakage Current
(VCES = –50 V, VBE = 0)
(VCES = –30 V, VBE = 0)
(VCES = –50 V, VBE = 0) TA = 125°C
(VCES = –30 V, VBE = 0) TA = 125°C
BC307,B,C
BC308C
BC307,B,C
BC308C
BC307,B,C
BC308C
BC307,B,C
BC308C
V(BR)CEO
V(BR)EBO
ICES
–45
–25
–5.0
–5.0
—
—
—
—
Order this document
by BC307/D
BC307
BC307B
BC307C
BC308C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Typ Max Unit
— — Vdc
——
— — Vdc
——
–0.2 –15 nAdc
–0.2 –15
–0.2 –4.0
µA
–0.2 –4.0
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
BC307 BC307B BC307C BC308C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc)
BC307B
BC307C/308C
hFE
Min
—
—
Typ
150
270
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BC307
BC307B/308B
BC307C/308C
120 —
200 290
420 500
(IC = –100 mAdc, VCE = –5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = see Note 1)
(IC = –100 mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –100 mAdc, IB = –5.0 mAdc)
Base–Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
Common Base Capacitance
(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz)
BC307B
BC307C/308C
BC307,B,C
BC308C
BC307,B,C
VCE(sat)
VBE(sat)
VBE(on)
—
—
—
—
—
—
—
–0.55
fT
Ccbo
NF
—
—
—
—
180
300
–0.10
–0.30
–0.25
–0.7
–1.0
–0.62
280
320
—
2.0
(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, f = 200 Hz)
BC308C
— 2.0
1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V.
Max
—
—
800
460
800
—
—
–0.3
–0.6
—
—
—
–0.7
—
—
6.0
10
10
Unit
—
Vdc
Vdc
Vdc
MHz
pF
dB
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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( motorola )
BC307C transistor
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