파트넘버.co.kr BD244C 데이터시트 PDF


BD244C 반도체 회로 부품 판매점

Complementary Silicon Plastic Power Transistors



ON Semiconductor 로고
ON Semiconductor
BD244C 데이터시트, 핀배열, 회로
BD243B, BD243C (NPN),
BD244B, BD244C (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general purpose amplifier and
switching applications.
Features
High Current Gain Bandwidth Product
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD243B, BD244B
BD243C, BD244C
VCEO
80
100
Vdc
Collector−Base Voltage
BD243B, BD244B
BD243C, BD244C
VCB Vdc
80
100
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEB 5.0 Vdc
IC 6 Adc
ICM 10 Adc
IB 2.0 Adc
PD
65 W
0.52 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
1.92
Unit
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1
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6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
80−100 VOLTS
65 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
4
1
BASE
EMITTER 3
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
BD24xyG
AY WW
BD24xy =
A=
Y=
WW =
G=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
Device
BD243BG
BD243CG
BD244BG
BD244CG
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Publication Order Number:
BD243B/D


BD244C 데이터시트, 핀배열, 회로
BD243B, BD243C (NPN), BD244B, BD244C (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
BD243B, BD244B
BD243C, BD244C
VCEO(sus)
Vdc
80 −
100 −
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
BD243B, BD243C, BD244B, BD244C
ICEO
mAdc
0.7
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
BD243B, BD244B
(VCE = 100 Vdc, VEB = 0)
BD243C, BD244C
ICES
mAdc
− 400
− 400
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
1.0
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc)
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
hFE
VCE(sat)
VBE(on)
30
15
Vdc
1.5
Vdc
2.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT MHz
3.0 −
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulsewidth 300 ms, Duty Cycle 2.0%.
2. fT = hfe ftest
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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BD244C transistor

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