BD241E 반도체 회로 부품 판매점
NPN SILICON POWER TRANSISTORS
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 Power Innovations Limited |
Copyright © 1997, Power Innovations Limited, UK
BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997
q 40 W at 25°C Case Temperature
q 3 A Continuous Collector Current
q 5 A Peak Collector Current
q Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (RBE = 100 Ω)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD241D
BD241E
BD241F
BD241D
BD241E
BD241F
VCER
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
160
180
200
120
140
160
5
3
5
1
40
2
32
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
SEPTEMBER 1981 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICES
Collector-emitter
cut-off current
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = 30 mA
(see Note 5)
VCE = 160 V
VCE = 180 V
VCE = 200 V
VCE = 90 V
VEB = 5 V
VCE = 4 V
VCE = 4 V
IB = 750 mA
VCE = 4 V
VCE = 10 V
VCE = 10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IC = 0
IC = 1 A
IC = 3 A
IC = 3 A
IC = 3 A
IC = 0.5 A
IC = 0.5 A
BD241D
BD241E
BD241F
BD241D
BD241E
BD241F
120
140
160
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
5
20
3
0.2
0.2
0.2
0.3
1
2.5
1.8
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.125 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton Turn-on time
toff Turn-off time
IC = 1 A
VBE(off) = -3.7 V
IB(on) = 0.1 A
RL = 20 Ω
IB(off) = -0.1 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.3 µs
1 µs
PRODUCT INFORMATION
2
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BD241E transistor
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