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STMicroelectronics |
BD241A
BD241C
NPN power transistors
Features
■ NPN transistors
Applications
■ Audio, general purpose switching and amplifier
transistors
Description
The devices are manufactured in Planar
technology with “Base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP types are BD242A and
BD242C.
.
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
BD241A
BD241C
Marking
BD241A
BD241C
Package
TO-220
TO-220
Packaging
Tube
Tube
July 2007
Rev 2
1/9
www.st.com
9
Absolute maximum ratings
1 Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCER
VCEO
VEBO
IC
ICM
IB
PTOT
Tstg
TJ
Collector-emitter voltage (RBE = 100Ω)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current (tp < ms)
Base current
Total dissipation at Tcase = 25°C
Storage temperature
Max. operating junction temperature
BD241A BD241C
Value
BD241A BD241C
70 115
60 100
5
3
5
1
40
-65 to 150
150
Unit
V
V
V
A
A
A
W
°C
°C
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