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STMicroelectronics |
BD241BFP
BD242BFP
COMPLEMENTARY SILICON POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s FULLY MOLDED ISOLATED PACKAGE
s 2000 V DC ISOLATION (U.L. COMPLIANT)
APPLICATIONS
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The BD241BFP is silicon epitaxial-base NPN
transistors mounted in TO-220FP fully molded
isolated package.
It is inteded for power linear and switching
applications.
The complementary PNP types is the BD242BFP.
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
P ar am et e r
VCER Collector-Base Voltage (RBE = 100 Ω)
VCEO Collector-Emit ter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
ICM Collector Peak Current
IB Base Current
Ptot Total Dissipation at Tc ≤ 25 oC
Tstg Storage Temperature
Tj Max. O perating Junction Temperature
For PNP types voltage and current values are negative.
April 1998
NPN
PNP
Value
BD 241 BF P
BD 242 BF P
90
80
5
3
5
1
24
-65 to 150
150
Uni t
V
V
V
A
A
A
W
oC
oC
1/4
BD241BFP / BD242BFP
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max 5.3 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICEO
Collector Cut-off
Current (IB = 0)
ICES Collect or Cut-off
Current (VBE = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus )∗ Collect or-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
VCE = 60 V
VCE = 80 V
VEB = 5 V
IC = 30 mA
IC = 3 A
IB = 0.6 A
VBE(ON) ∗ Base-Emitt er Voltage IC = 3 A
VCE = 4 V
hFE* DC Current G ain
IC = 1 A
IC = 3 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
VCE = 4 V
VCE = 4 V
Min. Typ.
80
25
10
M a x.
0.3
0.2
1
1.2
1.8
Unit
mA
mA
mA
V
V
V
2/4
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