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STMicroelectronics |
BD238
Low voltage PNP power transistor
Features
■ Low saturation voltage
■ PNP transistor
)Applications
t(s■ Audio, power linear and switching applications
roducDescription
PThe device is manufactured in planar technology
tewith “Base Island” layout. The resulting transistor
shows exceptional high gain performance
lecoupled with very low saturation voltage.
soThe NPN type is BD237.
1
2
3
SOT-32
(TO-126)
Figure 1. Internal schematic diagram
Obsolete Product(s) - ObTable 1. Device summary
Order code
Marking
Package
Packaging
BD238
BD238
SOT-32
Tube
June 2009
Doc ID 15786 Rev 1
1/9
www.st.com
9
Absolute maximum ratings
1 Absolute maximum ratings
BD238
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCBO Collector-base voltage (IE = 0)
-100
V
VCER Collector-emitter voltage (RBE = 1 kΩ)
-100
V
VCEO Collector-emitter voltage (IB = 0)
-80 V
VEBO Emitter-base voltage (IC = 0)
-5 V
IC
t(s)ICM
cPTOT
duTstg
Obsolete Product(s) - Obsolete ProTJ
Collector current
Collector peak current (tp < ms)
Total dissipation at Tcase = 25 °C
Storage temperature
Max. operating junction temperature
-2
-6
25
-65 to 150
150
A
A
W
°C
°C
2/9 Doc ID 15786 Rev 1
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