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STMicroelectronics |
BD234
SILICON PNP TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s PNP TRANSISTOR
DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power
transistor in Jedec SOT-32 plastic package
inteded for use in medium power linear and
switching applications.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCER
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (RBE = 1KΩ)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Total Dissipation at Tc ≤ 25 oC
Storage Temperature
Max. Operating Junction Temperature
May 1997
Value
-45
-45
-45
-5
-2
-6
25
-65 to 150
150
Unit
V
V
V
V
A
A
W
oC
oC
1/4
BD234
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
5
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -45 V
VCB = -45 V Tc = 150 oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
VEB = -5 V
IC = -100 mA
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = -1 A
IB = -0.1 A
VBE∗ Base-Emitter Voltage IC = -1 A
VCE = -2 V
hFE∗ DC Current Gain
IC = -150 mA
IC = -1 A
VCE = -2 V
VCE = -2 V
fT Transition frequency IC = -250 mA VCE = -10 V
hFE1/hFE2∗ Matched Pairs
IC = -150 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCE = -2 V
Min. Typ.
-45
40
25
3
1.6
Max.
-0.1
-2
-1
-0.6
-1.3
Unit
mA
mA
mA
V
V
V
MHz
2/4
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