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Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD180/D
BD180
Plastic Medium Power Silicon
PNP Transistor
3.0 AMPERES
POWER TRANSISTOR
PNP SILICON
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
• BD180 is complementary with BD179
80 VOLTS
30 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
Value
80
80
5.0
3.0
1.0
30
240
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
θJC
4.16 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCB = 45 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 80 Vdc, IE = 0)
BD180
V(BR)CEO
ICBO
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
(IC = 0.15 A, VCE = 2.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 A, VCE = 2.0 V)
IEBO
hFE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 2.0 Vdc)
Current–Gain — Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎx x*Pulse Test: Pulse Width 300 µs, Duty Cycle
2.0%.
VCE(sat)
VBE(on)
fT
CASE 77–08
TO–225AA TYPE
Min Max Unit
80 — Vdc
mAdc
——
— 1.0
— 1.0 mAdc
—
40 250
15 —
— 0.8 Vdc
— 1.3 Vdc
3.0 — MHz
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
BD180
10
7.0 100 µs
5.0
1.0 ms
3.0
2.0 5.0 ms
1.0 TJ = 150°C
0.7
dc
0.5 SECONDARY BREAKDOWN LIMITATION
0.3 THERMAL LIMITATION
(BASE-EMITTER DISSIPATION IS
0.2 SIGNIFICANT ABOVE IC = 20 AMP)
0.1
1.0
PULSE DUTY CYCLE < 10%
BD180
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
1.0
TJ = 25°C
0.8
IC = 0.1 A
0.25 A
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power–temperature
derating must be observed for both steady state and pulse
power conditions.
0.5 A 1.0 A
0.6
0.4
0.2
0
0.2
1000
700
500
300
0.5 1.0 2.0
5.0 10 20
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
1.5
VCE = 2.0 V
1.2 TJ = 25°C
50 100 200
200 TJ = + 150°C
0.9
100 TJ = + 25°C
70
50 TJ = – 55°C
30
20
10
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain
1.0
0.7 D = 0.5
0.5
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
0
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
0.3 D = 0.2
0.2 D = 0.1
0.1 D = 0.05
0.07 D = 0.01
0.05
0.03
0.02
SINGLE PULSE
θJC(t) = r(t) θJC
θJC = 4.16°C/W MAX
θJC = 3.5°C/W TYP
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1
0.2 0.3
0.5 1.0 2.0 3.0 5.0 10
t, TIME or PULSE WIDTH (ms)
20 30
Figure 5. Thermal Response
50
100 200 300 500 1000
2 Motorola Bipolar Power Transistor Device Data
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