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BD179-10 반도체 회로 부품 판매점

Plastic Medium Power Silicon NPNP Transistor



Motorola  Inc 로고
Motorola Inc
BD179-10 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD179/D
BD179
Plastic Medium Power Silicon
BD179-10
NPN Transistor
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
BD179 is complementary with BD180
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
TJ, Tstg
Value
80
80
5.0
3.0
1.0
30
240
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mw/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
θJC
4.16 _C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
BD179–10
ALL
V(BR)CEO
ICBO
IEBO
hFE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain – Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎx x*Pulse Test: Pulse Width 300 As, Duty Cycle 2.0%.
VCE(sat)
VBE(on)
fT
3.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS
30 WATTS
CASE 77–08
TO–225AA TYPE
Min Max Unit
80 — Vdc
— 0.1 mAdc
— 1.0 mAdc
63 160
15 —
— 0.8 Vdc
— 1.3 Vdc
3.0 — MHz
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1


BD179-10 데이터시트, 핀배열, 회로
BD179 BD179-10
10
7.0 100 µs
5.0 1.0 ms
3.0
2.0 5.0 ms
1.0 TJ = 150°C
0.7
dc
0.5 SECONDARY BREAKDOWN LIMITATION
0.3
0.2
0.1
1.0
THERMAL LIMITATION
(BASE–EMITTER DISSIPATION IS
SIGNIFICANT ABOVE IC = 2.0 AMP)
PULSE DUTY CYCLE < 10%
2.0 3.0 5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
1.0
0.8
IC = 0.1 A
0.25 A
0.6
0.4
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power–temperature
derating must be observed for both steady state and pulse
power conditions.
0.5 A 1.0 A
TJ = 25°C
0.2
0
0.2 0.3
0.5
1000
700
500
300
200
100 TJ = + 150°C
70
50
TJ = + 25°C
1.0
2.0 3.0
5.0
10
20 30
50
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
1.5
VCE = 2.0 V
1.2 TJ = 25°C
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
100 200
30 TJ = + 55°C
20
10
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain
1.0
0.7 D = 0.5
0.5
0.3
0
2.0 3.0
VCE(sat) @ IC/IB = 10
5.0 10 20 30 50 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
1000 2000
0.3 D = 0.2
0.2 D = 0.1
0.1 D = 0.05
0.07 D = 0.01
0.05
0.03
0.02
0.01
0.01 0.02 0.03 0.05 0.1
2
SINGLE PULSE
θJC(t) = r(t) θJC
θJC = 4.16°C/W MAX
θJC = 3.5°C/W TYP
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3
0.5 1.0 2.0 3.0 5.0 10 20
t, TIME or PULSE WIDTH (ms)
Figure 5. Thermal Response
30
50
100 200 300 500 1000
Motorola Bipolar Power Transistor Device Data




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BD179-10 transistor

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BD179-10

Plastic Medium Power Silicon NPNP Transistor - Motorola Inc