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BD179 반도체 회로 부품 판매점

Plastic Medium-Power NPN Silicon Transistor



ON Semiconductor 로고
ON Semiconductor
BD179 데이터시트, 핀배열, 회로
BD179
Plastic Medium-Power
NPN Silicon Transistor
This device is designed for use in 5.0 to 10 Watt audio amplifiers
and drivers utilizing complementary or quasi complementary circuits.
Features
ăDC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc
ăBD179 is complementary with BD180
ăPb-Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
VCEO
VCBO
VEBO
IC
IB
PD
80 Vdc
80 Vdc
5.0 Vdc
3.0 Adc
1.0 Adc
30 W
240 mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –ā65 to +ā150 _C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
qJC
4.16 _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
3.0 AMPERES
POWER TRANSISTORS
NPN SILICON
80 VOLTS, 30 WATTS
321
TO-225
CASE 77
STYLE 1
MARKING DIAGRAM
YWW
BD179G
Y = Year
WW = Work Week
BD179 = Device Code
G = Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD179
BD179G
TO-225
TO-225
(Pb-Free)
500 Units/Box
500 Units/Box
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 12
1
Publication Order Number:
BD179/D


BD179 데이터시트, 핀배열, 회로
BD179
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Sustaining Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.15 A, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector-Emitter Saturation Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, IB = 0.1 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase-Emitter On Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent-Gain - Bandwidth Product
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1. Pulse Test: Pulse Width x 300 As, Duty Cycle x 2.0%.
Symbol
Min Max
V(BR)CEO
80
-
Unit
Vdc
ICBO
- 0.1 mAdc
IEBO
- 1.0 mAdc
hFE
VCE(sat)
63 160
15 -
-
- 0.8 Vdc
VBE(on)
- 1.3 Vdc
fT 3.0 - MHz
10
7.0 100 ms
5.0 1.0 ms
3.0
2.0 5.0 ms
1.0 TJ = 150°C
0.7
dc
0.5 SECONDARY BREAKDOWN LIMITATION
0.3
0.2
0.1
1.0
THERMAL LIMITATION
(BASE-EMITTER DISSIPATION IS
SIGNIFICANT ABOVE IC = 2.0 AMP)
PULSE DUTY CYCLE < 10%
2.0 3.0 5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
The Safe Operating Area Curves indicate IC - VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ,
power-temperature derating must be observed for both
steady state and pulse power conditions.
http://onsemi.com
2




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BD179 transistor

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