BD158 반도체 회로 부품 판매점
Plastic Medium Power NPN Silicon Transistor
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 Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD157/D
Plastic Medium Power NPN
Silicon Transistor
BD157
BD158
BD159
. . . designed for power output stages for television, radio, phonograph and other
consumer product applications.
0.5 AMPERE
• Suitable for Transformerless, Line–Operated Equipment
• Thermopad{ Construction Provides High Power Dissipation Rating for High
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎReliability
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
BD 157 BD 158 BD 159
250 300 350
275 325 375
5.0
0.5
1.0
0.25
20
0.16
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
θJC
6.25
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 mAdc, IB = 0)
BVCEO
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(At rated voltage)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 mAdc, VCE = 10 Vdc)
ICBO
IEBO
hFE
Unit
_C/W
Type
BD 157
BD 158
BD 159
POWER TRANSISTORS
NPN SILICON
250 – 300 – 350 VOLTS
20 WATTS
CASE 77–08
TO–225AA TYPE
Min Max Unit
250 — Vdc
300
350
— 100 µAdc
— 100 µAdc
30 240 —
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
BD157 BD158 BD159
25
20
15
10
5.0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power–Temperature Derating Curve
1.0
0.8 VBE @ IC/IB = 10
0.6 VBE @ VCE = 10 V
0.4
VCE(sat) @ IC/IB = 10
0.2
TJ = + 25°C
IC/IB = 5.0
0
10 20 30 50
100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltages
500
1.0
0.7
0.5
0.3 TJ = 150°C
0.2
10 µs
500 µs
1.0 ms
dc
0.1
0.07
0.05
0.03
0.02
0.01
10
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
BD157
BD158
BD159
20 30
50
100 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. DC Safe Operating Area
300
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below, the maximum TJ, power–tempera-
ture derating must be observed for both steady state and
pulse power conditions.
300
200
100
70
50
30
20
10
1.0
TJ = 150°C
+ 100°C
+ 25°C
– 55°C
2.0 3.0
5.0 7.0
10
20 30
50
IC, COLLECTOR CURRENT (mAdc)
Figure 4. Current Gain
70
100
VCE = 10 V
VCE = 2.0 V
200 300
500
2 Motorola Bipolar Power Transistor Device Data
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제조업체: Motorola Inc
( motorola )
BD158 transistor
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[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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