파트넘버.co.kr BD136 데이터시트 PDF


BD136 반도체 회로 부품 판매점

PNP Epitaxial Silicon Transistor



Fairchild Semiconductor 로고
Fairchild Semiconductor
BD136 데이터시트, 핀배열, 회로
March 2015
BD136 / BD138 / BD140
PNP Epitaxial Silicon Transistor
Features
• Complement to BD135, BD137 and BD139 respectively
Applications
• Medium Power Linear and Switching
1 TO-126
1. Emitter 2.Collector 3.Base
Ordering Information
Part Number
BD13610S
BD13610STU
BD13616S
BD13616STU
BD13810STU
BD13816STU
BD14010STU
BD14016S
BD14016STU
Marking
BD136-10
BD136-10
BD136-16
BD136-16
BD138-10
BD138-16
BD140-10
BD140-16
BD140-16
Package
TO-126 3L
TO-126 3L
TO-126 3L
TO-126 3L
TO-126 3L
TO-126 3L
TO-126 3L
TO-126 3L
TO-126 3L
Packing Method
Bulk
Rail
Bulk
Rail
Rail
Rail
Rail
Bulk
Rail
© 2000 Fairchild Semiconductor Corporation
BD136 / BD138 / BD140 Rev. 2.2
www.fairchildsemi.com


BD136 데이터시트, 핀배열, 회로
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
BD136
-45
VCBO Collector-Base Voltage
BD138
BD140
-60 V
-80
BD136
-45
VCEO Collector-Emitter Voltage
BD138
BD140
-60 V
-80
VEBO
IC
IC
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
TC = 25°C
TA = 25°C
-5
-1.5
-3.0
-0.5
12.5
1.25
150
-55 to +150
V
A
A
A
W
°C
°C
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
VCEO(sus)
Collector-Emitter Sustaining
Voltage(1)
BD136
BD138 IC = -30 mA, IB = 0
BD140
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(on)
Collector Cut-Off Current
VCB = -30 V, IE = 0
Emitter Cut-Off Current
VEB = -5 V, IC = 0
DC Current Gain(1)
VCE = -2 V, IC = -5 mA
DC Current Gain(1)
VCE = -2 V, IC = -0.5 A
DC Current Gain(1)
VCE = -2 V, IC = -150 mA
Collector-Emitter Saturation Voltage(1) IC = -500 mA, IB = -50 mA
Base-Emitter On Voltage(1)
VCE = -2 V, IC = -0.5 A
Note:
1. Pulse test: pulse width = 350 μs, duty cycle = 2.0% pulsed.
Min.
-45
-60
-80
25
25
40
Typ.
Max.
-0.1
-10
250
-0.5
-1
Unit
V
μA
μA
V
V
hFE Classification
Classification
hFE3
10
63 ~ 160
16
100 ~ 250
© 2000 Fairchild Semiconductor Corporation
BD136 / BD138 / BD140 Rev. 2.2
2
www.fairchildsemi.com




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BD136 transistor

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