파트넘버.co.kr BD135 데이터시트 PDF


BD135 반도체 회로 부품 판매점

NPN power transistors



NXP Semiconductors 로고
NXP Semiconductors
BD135 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD135; BD137; BD139
NPN power transistors
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12


BD135 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN power transistors
Product specification
BD135; BD137; BD139
FEATURES
High current (max. 1.5 A)
Low voltage (max. 80 V).
APPLICATIONS
Driver stages in hi-fi amplifiers and television circuits.
PINNING
PIN
1
2
3
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD136, BD138 and BD140.
handbook, halfpage
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
2
3
1
1 2 3 Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BD135
BD137
BD139
collector-emitter voltage
BD135
BD137
BD139
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb 70 °C
MIN.
MAX.
UNIT
45 V
60 V
100 V
45 V
60 V
80 V
5V
1.5 A
2A
1A
8W
65
+150
°C
150 °C
65
+150
°C
1999 Apr 12
2




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BD135 transistor

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