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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD135; BD137; BD139
NPN power transistors
Product specification
Supersedes data of 1997 Mar 04
1999 Apr 12
Philips Semiconductors
NPN power transistors
Product specification
BD135; BD137; BD139
FEATURES
• High current (max. 1.5 A)
• Low voltage (max. 80 V).
APPLICATIONS
• Driver stages in hi-fi amplifiers and television circuits.
PINNING
PIN
1
2
3
DESCRIPTION
NPN power transistor in a TO-126; SOT32 plastic
package. PNP complements: BD136, BD138 and BD140.
handbook, halfpage
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
2
3
1
1 2 3 Top view
MAM254
Fig.1 Simplified outline (TO-126; SOT32) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BD135
BD137
BD139
collector-emitter voltage
BD135
BD137
BD139
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tmb ≤ 70 °C
MIN.
MAX.
UNIT
− 45 V
− 60 V
− 100 V
− 45 V
− 60 V
− 80 V
−5V
− 1.5 A
−2A
−1A
−8W
−65
+150
°C
− 150 °C
−65
+150
°C
1999 Apr 12
2
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