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NPN general purpose transistors



NXP Semiconductors 로고
NXP Semiconductors
BCY89 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D126
BCY87; BCY88; BCY89
NPN general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 20


BCY89 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN general purpose transistors
Product specification
BCY87; BCY88; BCY89
FEATURES
Low current (max. 30 mA)
Low voltage (max. 45 V).
APPLICATIONS
Differential amplifier applications in general industrial
service e.g. instrumentation and control
The BCY87 and BCY88 are intended for use in
pre-stages of differential amplifiers where low offset, low
drift and low noise are of prime importance
The BCY89 is intended for use in second stages of
differential amplifiers, long-tailed pairs and more general
applications.
DESCRIPTION
Matched dual NPN transistors in a TO-71; SOT31 metal
package. Products are divided into 3 types according to
their matching accuracy.
PINNING
PIN(1)
1
2
3
4
5
6
DESCRIPTION
emitter TR1
emitter TR2
collector TR2
basis TR2
basis TR1
collector TR1
Note
1. All leads insulated from the case.
handbook, halfpage
64 2
1
2
63
TR2
TR1
5
4
MAM351
153
Fig.1 Simplified outline (TO-71; SOT31)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Per transistor
VCBO
VCEO
Ptot
hFE
collector-base voltage
collector-emitter voltage
total power dissipation
DC current gain
BCY87
BCY88
BCY89
hFE DC current gain
fT transition frequency
CONDITIONS
MIN.
MAX.
UNIT
open emitter
45 V
open base
40 V
Tamb 25 °C
150 mW
VCE = 10 V
IC = 5 µA
80
IC = 500 µA
120 600
IC = 10 mA
100 600
IC = 50 µA; VCE = 10 V
100 450
IC = 50 µA; VCE = 10 V; f = 100 MHz 10
MHz
IC = 500 µA; VCE = 10 V; f = 100 MHz 50
MHz
1997 Jun 20
2




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