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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D126
BCY87; BCY88; BCY89
NPN general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 20
Philips Semiconductors
NPN general purpose transistors
Product specification
BCY87; BCY88; BCY89
FEATURES
• Low current (max. 30 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Differential amplifier applications in general industrial
service e.g. instrumentation and control
• The BCY87 and BCY88 are intended for use in
pre-stages of differential amplifiers where low offset, low
drift and low noise are of prime importance
• The BCY89 is intended for use in second stages of
differential amplifiers, long-tailed pairs and more general
applications.
DESCRIPTION
Matched dual NPN transistors in a TO-71; SOT31 metal
package. Products are divided into 3 types according to
their matching accuracy.
PINNING
PIN(1)
1
2
3
4
5
6
DESCRIPTION
emitter TR1
emitter TR2
collector TR2
basis TR2
basis TR1
collector TR1
Note
1. All leads insulated from the case.
handbook, halfpage
64 2
1
2
63
TR2
TR1
5
4
MAM351
153
Fig.1 Simplified outline (TO-71; SOT31)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Per transistor
VCBO
VCEO
Ptot
hFE
collector-base voltage
collector-emitter voltage
total power dissipation
DC current gain
BCY87
BCY88
BCY89
hFE DC current gain
fT transition frequency
CONDITIONS
MIN.
MAX.
UNIT
open emitter
− 45 V
open base
− 40 V
Tamb ≤ 25 °C
− 150 mW
VCE = 10 V
IC = 5 µA
80 −
IC = 500 µA
120 600
IC = 10 mA
100 600
IC = 50 µA; VCE = 10 V
100 450
IC = −50 µA; VCE = 10 V; f = 100 MHz 10
−
MHz
IC = −500 µA; VCE = 10 V; f = 100 MHz 50
−
MHz
1997 Jun 20
2
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