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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D361
BCY70; BCY71
PNP general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 11
Philips Semiconductors
PNP general purpose transistors
Product specification
BCY70; BCY71
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose industrial applications.
DESCRIPTION
PNP transistor in a TO-18 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
2
MAM263
3
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BCY70
BCY71
VCEO
collector-emitter voltage
BCY70
BCY71
ICM peak collector current
Ptot total power dissipation
hFE DC current gain
fT transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = −10 mA; VCE = −1 V
IC = −10 mA; VCE = −20 V; f = 100 MHz
MIN.
−
−
−
−
−
−
100
250
MAX.
UNIT
−50
−45
−40
−45
−200
350
−
−
V
V
V
V
mA
mW
MHz
1997 Jul 11
2
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