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Diotec Semiconductor |
BCX 71
PNP
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
Tj
TS
Grenzwerte (TA = 25/C)
BCX 71
45 V
45 V
5V
250 mW 1)
100 mA
200 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 32 V
IE = 0, - VCB = 32 V, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
- ICB0
- ICB0
IC = 0, - VEB = 4 V
- IEB0
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- IC = 10 mA, - IB = 0.25 mA
- IC = 50 mA, - IB = 1.25 mA
- VCEsat
- VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 20 nA
– – 20 :A
– – 20 nA
60 mV
– 250 mV
120 mV – 550 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
58 01.11.2003
General Purpose Transistors
BCX 71
Characteristics (Tj = 25/C)
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.25 mA
- VBEsat
- IC = 50 mA, - IB = 1.25 mA
- VBEsat
DC current gain – Kollektor-Basis-Stromverhältnis 1)
BCX 71G hFE
- VCE = 5 V, - IC = 10 :A
BCX 71H
BCX 71J
hFE
hFE
BCX 71K hFE
BCX 71G hFE
- VCE = 5 V, - IC = 2 mA
BCX 71H
BCX 71J
hFE
hFE
BCX 71K hFE
BCX 71G hFE
- VCE = 1 V, - IC = 50 mA
BCX 71H
BCX 71J
hFE
hFE
BCX 71K hFE
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 10 :A
- VCE = 5 V, - IC = 2 mA
- VCE = 1 V, - IC = 50 mA
Gain-Bandwidth Product – Transitfrequenz
- VBEon
- VBEon
- VBEon
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
CEB0
- VCE = 5 V, - IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz
F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
600 mV
700 mV
– 850 mV
– 1050 mV
–––
30 –
–
40 –
–
100 –
–
120 – 220
180 – 310
250 – 460
380 – 630
60 –
–
80 –
–
100 –
–
110 –
–
–
600 mV
–
550 mV
650 mV
720 mV
–
750 mV
–
100 MHz
–
–
– 4.5 pF –
– 11 pF –
– 2 dB 6 dB
RthA 420 K/W 2)
BCX 70 series
Marking
Stempelung
BCX 71G = BG BCX 71H = BH BCX 71J = BJ BCX 71K = BK
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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