BCX70K 반도체 회로 부품 판매점
NPN Epitaxial Silicon Transistor
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 Fairchild Semiconductor |
BCX70K
General Purpose Transistor
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
PC Collector Power Dissipation
TSTG
Storage Temperature
• Refer to KST3904 for graphs
2
1 SOT-23
1. Base 2. Emitter 3. Collector
Value
45
45
5
200
350
-55 ~ 150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
BVEBO
ICES
IEBO
hFE
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
VBE (on)
fT
Cob
NF
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
tON Turn On Time
tOFF
Turn Off Time
IC=2.0mA, IB=0
IE=1.0µA, IC=0
VCE=32V, VBE=0
VEB=4V, IC=0
VCE=5V, IC=10µA
VCE=5V, IC=2.0mA
VCE=1V, IC=50mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=2.0mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, IE=0, f=1MHz
VCE=5V, IC=0.2mA
RS=2KΩ, f=1KHz
IC=10mA, IB1=1.0mA
VBB=3.6V, IB2=1.0mA
R1=R2=5KΩ, RL=990Ω
Min.
45
5
100
380
100
0.6
0.7
0.55
125
Max.
20
20
Units
V
V
nA
nA
630
0.35
0.55
0.85
1.05
0.75
4.5
6
V
V
V
V
V
MHz
pF
dB
150 ns
800 ns
Marking
AK
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002
Package Dimensions
SOT-23
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B2, December 2002
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제조업체: Fairchild Semiconductor
( fairchild )
BCX70K transistor
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