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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D088
BCX70 series
NPN general purpose transistors
Product specification
Supersedes data of 1997 Mar 14
1999 Apr 15
Philips Semiconductors
NPN general purpose transistors
Product specification
BCX70 series
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCX71 series.
MARKING
TYPE NUMBER
BCX70G
BCX70H
BCX70J
BCX70K
MARKING CODE(1)
AG∗
AH∗
AJ∗
AK∗
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
1
Top view
1
2
MAM255
3
2
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
45
45
5
100
200
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
1999 Apr 15
2
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