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Siemens Semiconductor Group |
NPN Silicon AF Transistors
q For general AF applications
q High collector current
q High current gain
q Low collector-emitter saturation voltage
q Complementary type: BCX 69 (PNP)
BCX 68
Type
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
Marking
–
CB
CC
CD
Ordering Code
(tape and reel)
Q62702-C1572
Q62702-C1864
Q62702-C1865
Q62702-C1866
Pin Configuration
123
BCE
Package1)
SOT-89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 130 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient 2)
Junction - soldering point
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
Unit
20 V
25
5
1A
2
100 mA
200
1W
150 ˚C
– 65 … + 150
Rth JA
Rth JS
≤ 75
≤ 20
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BCX 68
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 30 mA
Collector-base breakdown voltage
IC = 10 µA
Emitter-base breakdown voltage
IE = 1 µA
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
Emitter cutoff current
VEB = 5 V
DC current gain1)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 1 V
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA
Base-emitter voltage1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
AC characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 20 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 20
–
–
V
V(BR)CB0 25
–
–
V(BR)EB0 5 – –
ICB0
– – 100 nA
– – 100 µA
IEB0 – – 10 µA
hFE
VCEsat
–
50 –
–
85 –
375
85 100 160
100 160 250
160 250 375
60 –
–
– – 0.5 V
VBE
– 0.6 –
––1
fT – 100 – MHz
1) Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
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