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BCX68 반도체 회로 부품 판매점

NPN Silicon AF Transistors (For general AF applications High collector current)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BCX68 데이터시트, 핀배열, 회로
NPN Silicon AF Transistors
q For general AF applications
q High collector current
q High current gain
q Low collector-emitter saturation voltage
q Complementary type: BCX 69 (PNP)
BCX 68
Type
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
Marking
CB
CC
CD
Ordering Code
(tape and reel)
Q62702-C1572
Q62702-C1864
Q62702-C1865
Q62702-C1866
Pin Configuration
123
BCE
Package1)
SOT-89
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 130 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient 2)
Junction - soldering point
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
Unit
20 V
25
5
1A
2
100 mA
200
1W
150 ˚C
– 65 … + 150
Rth JA
Rth JS
75
20
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91


BCX68 데이터시트, 핀배열, 회로
BCX 68
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 30 mA
Collector-base breakdown voltage
IC = 10 µA
Emitter-base breakdown voltage
IE = 1 µA
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
Emitter cutoff current
VEB = 5 V
DC current gain1)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 1 V
BCX 68
BCX 68-10
BCX 68-16
BCX 68-25
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA
Base-emitter voltage1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
AC characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 20 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 20
V
V(BR)CB0 25
V(BR)EB0 5 – –
ICB0
– – 100 nA
– – 100 µA
IEB0 – – 10 µA
hFE
VCEsat
50 –
85 –
375
85 100 160
100 160 250
160 250 375
60 –
– – 0.5 V
VBE
– 0.6 –
––1
fT – 100 – MHz
1) Pulse test: t 300 µs, D = 2 %.
Semiconductor Group
2




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BCX68 transistor

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