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Siemens Semiconductor Group |
NPN Silicon AF Transistors
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BCX 78, BCX 79 (PNP)
BCX 58
BCX 59
2
3
1
Type
BCX 58 VIII
BCX 58 IX
BCX 58 X
BCX 59 VIII
BCX 59 IX
BCX 59 X
Marking
–
Ordering Code
Q62702-C619
Q62702-C620
Q62702-C621
Q62702-C623
Q62702-C624
Q62702-C625
Pin Configuration
123
CB E
Package1)
TO-92
Maximum Ratings
Parameter
Symbol
BCX 58
Collector-emitter voltage
VCE0
32
Collector-base voltage
VCB0
32
Emitter-base voltage
VEB0
Collector current
IC
Peak collector current
ICM
Peak base current
IBM
Total power dissipation, TC = 70 ˚C Ptot
Junction temperature
Tj
Storage temperature range
Tstg
Values
BCX 59
45
45
7
100
200
200
500
150
– 65 … + 150
Thermal Resistance
Junction - ambient
Rth JA
Junction - case2)
Rth JC
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
≤ 250
≤ 160
Unit
V
mA
mW
˚C
K/W
Semiconductor Group
1
5.91
BCX 58
BCX 59
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 2 mA
BCX 58
BCX 59
Collector-base breakdown voltage
IC = 10 µA
BCX 58
BCX 59
Emitter-base breakdown voltage
IE = 1 µA
Collector cutoff current
VCB = 32 V
VCB = 45 V
VCB = 32 V, TA = 150 ˚C
VCB = 45 V, TA = 150 ˚C
BCX 58
BCX 59
BCX 58
BCX 59
Collector cutoff current
VCE = 32 V, VBE = 0.2 V,TA = 100 ˚C
VCE = 45 V, VBE = 0.2 V,TA = 100 ˚C
Emitter cutoff current
VEB = 4 V
DC current gain
IC = 10 µA, VCE = 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
IC = 2 mA, VCE = 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
IC = 100 mA, VCE = 1 V1)
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V
32 –
–
45 –
–
V(BR)CB0
32
45
–
–
–
–
V(BR)EB0 7 – –
ICB0
– – 20 nA
– – 20 nA
– – 10 µA
– – 10 µA
ICEX
µA
– – 20
– – 20
IEB0 – – 20 nA
hFE –
20 78 –
20 145 –
40 220 –
100 300 –
120 170 220
180 250 310
250 350 460
380 500 630
40 –
45 –
60 –
60 –
–
–
–
–
1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
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