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Infineon Technologies AG |
PNP Silicon AF Transistors
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCX54...BCX56 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCX51...-BCX53...
1
2
3
2
Type
BCX51
BCX51-16
BCX52
BCX52-16
BCX53
BCX53-10
BCX53-16
Marking
AA
AD
AE
AM
AH
AK
AL
Pin Configuration
1=B 2=C 3=E
1=B 2=C 3=E
1=B 2=C 3=E
1=B 2=C 3=E
1=B 2=C 3=E
1=B 2=C 3=E
1=B 2=C 3=E
Package
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
1 2011-07-29
BCX51...-BCX53...
Maximum Ratings
Parameter
Collector-emitter voltage
BCX51
BCX52
BCX53
Symbol
VCEO
Value
45
60
80
Collector-base voltage
BCX51
BCX52
BCX53
VCBO
45
60
100
Emitter-base voltage
Collector current
Peak collector current, tp ≤ 10 ms
Base current
Peak base current
Total power dissipation
TS ≤ 120 °C
VEBO
IC
ICM
IB
IBM
Ptot
5
1
1.5
100
200
2
Junction temperature
Tj 150
Storage temperature
Tstg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 15
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
A
mA
W
°C
Unit
K/W
2 2011-07-29
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