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Infineon Technologies AG |
PNP Silicon AF an Swiching Transistors
For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BCX41, BSS64 (NPN)
BCX42, BSS63
3
2
1 VPS05161
Type
BCX42
BSS63
Marking
DKs
BMs
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
BSS63
BCX42
100 125
110 125
55
800
1
100
200
330
150
-65 ... 150
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Jul-10-2001
BCX42, BSS63
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BSS63
BCX42
V(BR)CEO
100
125
-
-
V
-
-
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BSS63
BCX42
V(BR)CBO
110
125
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 80 V, IE = 0
VCB = 100 V, IE = 0
Collector cutoff current
VCB = 80 V, IE = 0 , TA = 150 °C
VCB = 100 V, IE = 0 , TA = 150 °C
BSS63
BCX42
BSS63
BCX42
V(BR)EBO 5
ICBO
ICBO
-
-
-
-
--
nA
- 100
- 100
µA
- 20
- 20
Emitter cutoff current
VEB = 4 V, IC = 0
Collector cutoff current
VCE = 100 V, TA = 85 °C
VCE = 100 V, TA = 125 °C
BCX42
BCX42
IEBO
ICEO
- - 100 nA
µA
- - 10
- - 75
DC current gain 1)
IC = 100 µA, VCE = 1 V
IC = 10 mA, VCE = 5 V
IC = 20 mA, VCE = 5 V
IC = 100 mA, VCE = 1 V
IC = 200 mA, VCE = 1 V
BCX42
BSS63
BSS63
BCX42
BCX42
hFE
25 -
30 -
30 -
63 -
40 -
-
-
-
-
-
-
1) Pulse test: t ≤ 300µs, D = 2%
2
Jul-10-2001
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