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PDF BCX41 Data sheet ( Hoja de datos )
| Número de pieza | BCX41 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCX41 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 OCTOBER 1995 7
PARTMARKING DETAIL EK
BCX41
2
1
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
VCES
125 V
Collector-Emitter Voltage
VCEO
125 V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM 1 A
Continuous Collector Current
IC
800 mA
Base Current
IB 100 mA
Power Dissipation at Tamb=25°C
PTOT
330 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off ICES
Current
Collector Cut-Off
Current
ICEX
Emitter Cut-Off
Current
IEBO
100 nA VCE =100V
10 µA VCE =100V, Tamb =150°C
10 µA VCE =100V,VBE=0.2V,Tamb =85°C
75 µA VCE=100V,VBE=0.2V,
Tamb=125°C
100 nA VEB =4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.9 V IC =300mA, IB =30mA *
Base-Emitter
Saturation Voltage
VBE(sat)
1.4 V IC =300mA, IB =30mA *
Static Forward
hFE
Current Transfer Ratio
Transition Frequency fT
25
63
40
100
MHz
IC =100µA, VCE =1V
IC =100mA, VCE =1V *
IC =200mA, VCE =1V *
IC =10mA, VCE =5V
f =20MHz
Output Capacitance Cobo
12 pF VCB =10V, IE=Ie=0, f =1MHz
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
3 - 33
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