BCX19R 반도체 회로 부품 판매점
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
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 Zetex Semiconductors |
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – MARCH 2001
PARTMARKING DETAILS –
BCX19 -
BCX19R -
U1
U4
COMPLEMENTARY TYPES - BCX17
BCX19
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
VCES
VCEO
VEBO
ICM
IC
IB
IBM
PTOT
Tj:Tstg
50
45
5
1000
500
100
200
330
-55 to +150
V
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off ICBO
Current
Emitter-Base Cut-Off
Current
IEBO
100 nA
200 µA
10 µA
VCB =20V
VCB =20V, Tj=150°C
VEB =5V
Base-Emitter Voltage
Collector-Emitter
Saturation Voltage
VBE
VCE(sat)
1.2 V
IC =500mA, VCE =1V*
620 mV IC =500mA, IB =50mA*
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
100 600 IC =100mA, VCE =1V
70 IC =300mA, VCE =1V*
40 IC =500mA, VCE =1V*
200 MHz IC =10mA, VCE =5V
f =35MHz
Output Capacitance
Cobo
5.0 pF VCB =10V, f =1MHz
*Measured under pulsed conditions.
TBA
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제조업체: Zetex Semiconductors
( zetexs )
BCX19R transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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