BCX17 반도체 회로 부품 판매점
Surface mount Si-Epitaxial PlanarTransistors
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 Diotec Semiconductor |
BCX 17, BCX 18
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCB0
- VEB0
Ptot
- IC
- ICM
- IBM
Tj
TS
Grenzwerte (TA = 25/C)
BCX 17
BCX 18
45 V
25 V
50 V
30 V
5V
250 mW 1)
500 mA
1A
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 20 V
IE = 0, - VCB = 20 V, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
- ICB0
- ICB0
IC = 0, - VEB = 5 V
- IEB0
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
- IC = 500 mA, - IB = 50 mA
- VCEsat
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 100 nA
– – 5 :A
– – 100 nA
– – 620 mV
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
52 01.11.2003
General Purpose Transistors
BCX 17, BCX 18
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 1 V, - IC = 100 mA
hFE
- VCE = 1 V, - IC = 300 mA
hFE
- VCE = 1 V, - IC = 500 mA
hFE
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 1 V, - IC = 500 mA
Gain-Bandwidth Product – Transitfrequenz
- VBEon
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
100 – 600
70 –
–
40 –
–
– – 1.2 V
80 MHz
–
–
– 9 pF –
RthA 420 K/W 2)
BCX 19, BCX 20
Marking – Stempelung
BCX 17 = T1
BCX 18 = T2
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
53
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제조업체: Diotec Semiconductor
( diotec )
BCX17 transistor
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국내 전력반도체 판매점
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