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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BCW81
NPN general purpose transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 02
Philips Semiconductors
NPN general purpose transistor
Product specification
BCW81
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and high gain amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER
BCW81
MARKING CODE
K3p
handbook, halfpage
3
3
1
12
2
Top view
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
ICM
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V; f = 100 MHz
MIN.
−
−
−
−
420
100
MAX.
50
45
200
250
800
−
UNIT
V
V
mA
mW
MHz
1997 Apr 02
2
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