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BCW68G 반도체 회로 부품 판매점

Surface mount Si-Epitaxial PlanarTransistors



Diotec Semiconductor 로고
Diotec Semiconductor
BCW68G 데이터시트, 핀배열, 회로
BCW 67, BCW 68
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basis-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCE0
- VCB0
- VEB0
Ptot
- IC
- ICM
- IB
- IBM
Tj
TS
Grenzwerte (TA = 25/C)
BCW 67
BCW 68
32 V
45 V
45 V
60 V
5V
250 mW 1)
800 mA
1000 mA
100 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 32 V
IE = 0, - VCB = 32 V, Tj = 150/C
BCW 67
IE = 0, - VCB = 45 V
IE = 0, - VCB = 45 V, Tj = 150/C
BCW 68
Emitter-Base cutoff current – Emitterreststrom
- ICB0
- ICB0
- ICB0
- ICB0
IC = 0, - VEB = 4 V
- IEB0
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 20 nA
– – 20 :A
– – 20 nA
– – 20 :A
– – 20 nA
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
44
01.11.2003


BCW68G 데이터시트, 핀배열, 회로
General Purpose Transistors
BCW 67, BCW 68
Characteristics (Tj = 25/C)
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
- IC = 100 mA, - IB = 10 mA
- VCEsat
- IC = 500 mA, - IB = 50 mA
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 100 mA, - IB = 10 mA
- VBEsat
- IC = 500 mA, - IB = 50 mA
- VBEsat
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 10 V
- IC = 100 : mA
BCW 67A / 68F
BCW 67B / 68G
BCW 67C / 68H
- VCE = 1 V
- IC = 10 mA
BCW 67A / 68F
BCW 67B / 68G
BCW 67C / 68H
- VCE = 1 V
- IC = 100 mA
BCW 67A / 68F
BCW 67B / 68G
BCW 67C / 68H
- VCE = 2 V
- IC = 500 mA
BCW 67A / 68F
BCW 67B / 68G
BCW 67C / 68H
Gain-Bandwidth Product – Transitfrequenz
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
- VCE = 5 V, - IC = 50 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN-transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 300 mV
– – 700 mV
– – 1.25 V
– – 2V
35 –
50 –
80 –
75 –
120 –
180 –
100 160 250
160 250 400
250 350 630
35 –
60 –
100 –
– 200 MHz –
– 6 pF –
– 60 pF –
RthA 420 K/W 2)
BCW 65, BCW 66
Marking – Stempelung
BCW 67A = DA BCW 67B = DB BCW 67C = DC
BCW 68F = DF BCW 68G = DG BCW 68H = DH
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
45




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