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Zetex Semiconductors |
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - MARCH 2001
PARTMARKING DETAILS –
BCW66F – EF
BCW66G – EG
BCW66H – EH
BCW66FR – 7P
BCW66GR – 5T
BCW66HR – 7M
COMPLEMENTARY TYPE – BCW68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current(10ms)
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tj:Tstg
BCW66
E
C
B
SOT23
VALUE
75
45
5
800
1000
100
330
-55 to +150
UNIT
V
V
V
mA
mA
mA
mW
°C
TBA
BCW66
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V(BR)CEO 45
V(BR)CES 75
V ICEO=10mA
V IC=10µA
Emitter-Base Breakdown Voltage V(BR)EBO 5
V IEBO =10µA
Collector-Emitter
Cut-off Current
ICES
20 nA VCES = 45V
20 µA VCES= 45V,Tamb=150°C
Emitter-Base Cut-Off Current
IEBO
20 nA VEBO =4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.3 V
0.7 V
IC=100mA, IB = 10mA
IC= 500mA, IB = 50mA*
Base-Emitter Saturation Voltage
VBE(sat)
2 V IC=500mA, IB=50mA*
Static
Forward
Current
Transfer
BCW66F hFE
75
100
35 160 250
IC= 10mA, VCE
= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
BCW66G hFE
110
160 250 400
60
IC= 10mA, VCE
= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
BCW66H hFE
180
250 350 630
100
IC= 10mA, VCE
= 1V
IC=100mA, VCE= 1V*
IC=500mA, VCE= 2V*
Transition Frequency
fT 100
MHz IC =20mA, VCE =10V
f = 100MHz
Output Capacitance
Input Capacitance
Noise Figure
Cobo
Cibo
N
8 12
80
2 10
Switching times:
Turn-On Time
Turn-Off Time
ton 100
toff 400
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
pF VCB =10V, f =1MHz
pF VEB =0.5V, f =1MHz
dB IC= 0.2mA, VCE = 5V
RG =1kΩ
ns IC=150mA
ns IB1=- IB2 =15mA
RL=150Ω
TBA
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