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BCW66G 반도체 회로 부품 판매점

NPN Silicon AF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BCW66G 데이터시트, 핀배열, 회로
NPN Silicon AF Transistor
 For general AF applications
 High current gain
 Low collector-emitter saturation voltage
 Complementary types: BCW67, BCW68 (PNP)
BCW65, BCW66
3
2
1 VPS05161
Type
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
Marking
EAs
EBs
ECs
EFs
EGs
EHs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
BCW65
BCW66
32 45
60 75
55
800
1
100
200
330
150
-65 ... 150
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Jul-10-2001


BCW66G 데이터시트, 핀배열, 회로
BCW65, BCW66
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCW65
BCW66
V(BR)CEO
32
45
-
-
V
-
-
Collector-base breakdown voltage
IC = 10 µA, IB = 0
BCW65
BCW66
V(BR)CBO
60
75
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector cutoff current
VCB = 32 V, IE = 0
VCB = 45 V, IE = 0
BCW65
BCW66
ICBO
nA
- - 20
- - 20
Collector cutoff current
VCB = 32 V, IE = 0 , TA = 150 °C
VCB = 45 V, IE = 0 , TA = 150 °C
BCW65
BCW66
ICBO
µA
- - 20
- - 20
Emitter cutoff current
VEB = 4 V, IC = 0
IEBO
- - 20 nA
DC current gain 1)
IC = 100 µA, VCE = 10 V
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
35 -
50 -
80 -
-
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 1 V
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
75 -
110 -
180 -
-
-
-
100 160 250
160 250 400
250 350 630
1) Pulse test: t 300µs, D = 2%
2
Jul-10-2001




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BCW66G transistor

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