파트넘버.co.kr BCW66G 데이터시트 PDF


BCW66G 반도체 회로 부품 판매점

SMALL SIGNAL NPN TRANSISTORS



STMicroelectronics 로고
STMicroelectronics
BCW66G 데이터시트, 핀배열, 회로
BCW66
SMALL SIGNAL NPN TRANSISTORS
Type
BCW66F
BCW 66G
BCW 66H
Marking
EF
EG
EH
s SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s MEDIUM CURRENT AF AMPLIFICATION
AND SWITCHING
s PNP COMPLEMENT IS BCW68
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
VCES
V CEO
V EBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Emit ter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at Tc = 25 oC
Storage Temperature
Max. O perating Junction Temperature
October 1997
Value
75
45
5
0.8
1
0.1
360
-65 to 150
150
Uni t
V
V
V
A
A
A
mW
oC
oC
1/4


BCW66G 데이터시트, 핀배열, 회로
BCW66
THERMAL DATA
Rthj-amb Thermal Resistance Junction-Ambient
Rth j-SR Thermal Resistance Junction-Substrat e
Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm2
Max
Max
375
278
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES Collect or Cut-off
Current (VBE = 0)
VCE = Rated VCES
VCE = Rated VCES
Tamb = 150 oC
IEBO
V(BR)CEO
Collector Cut-off
Current (IE = 0)
Co lle ct or- Em it t er
Breakdown Voltage
(IB = 0)
VEB = 4 V
IC = 10 mA
V(BR)CES Collect or-Emitter
Breakdown Voltage
(VEB = 0)
IC = 10 µA
V(BR)EBO
VCE(sat )
Em it t er -Base
Breakdown Voltage
(IC = 0)
Co lle ct or- Em it t er
Saturation Voltage
IC = 10 µA
IC = 100 mA IB = 10 mA
IC = 500 mA IB = 50 mA
VBE(s at)
hFE
Co lle ct or- Bas e
Saturation Voltage
DC Current G ain
IC = 100 mA
IC = 500 mA
IC = 0.1 mA
for group F
for group G
for group H
IC = 10 mA
for group F
for group G
for group H
IC = 100 mA
for group F
for group G
for group H
IC = 500 mA
for group F
for group G
for group H
IB = 10 mA
IB = 50 mA
VCE = 10 V
VCE = 1 V
VCE = 1 V
VCE = 2 V
fT Transit ion F requency IC = 20 mA VCE = 10V f = 100MHz
CCB Collect or Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz
CEB Emitt er Base
Capacitance
IC = 0 VCE = 0.5 V f = 1 MHz
NF Noise Figure
VCE = 5 V IC = 0.2 mA f = 1KHz
f = 200 Hz RG = 2 K
ton Switching On Time
IC = 150 mA
RL = 150
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
IB1 = -IB2 =15 mA
Min. Typ.
45
75
5
35
50
80
75
110
180
100
160
250
35
60
100
100
2
M a x.
20
20
20
0.3
0.7
1.25
2
250
400
630
12
80
10
100
Unit
nA
µA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
dB
ns
2/4




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: STMicroelectronics

( stm )

BCW66G transistor

데이터시트 다운로드
:

[ BCW66G.PDF ]

[ BCW66G 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BCW66

SMALL SIGNAL NPN TRANSISTORS - STMicroelectronics



BCW66

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR - Zetex Semiconductors



BCW66

NPN Silicon AF Transistor - Infineon Technologies AG



BCW66

Surface mount Si-Epitaxial PlanarTransistors - Diotec Semiconductor



BCW66

SILICON NPN TRANSISTORS - Central Semiconductor



BCW66

NPN Transistors - Kexin



BCW66

NPN General Purpose Amplifier - Galaxy Electrical



BCW66

Silicon NPN transistor - BLUE ROCKET ELECTRONICS



BCW66

NPN general-purpose transistor - NXP Semiconductors