|
Siemens Semiconductor Group |
NPN Silicon AF Transistors
q For general AF applications
q High current gain
q Low collector-emitter saturation voltage
q Complementary types: BCW 67, BCW 68 (PNP)
BCW 65
BCW 66
Type
BCW 65 A
BCW 65 B
BCW 65 C
BCW 66 F
BCW 66 G
BCW 66 H
Marking
EAs
EBs
ECs
EFs
EGs
EHs
Ordering Code
(tape and reel)
Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632
Pin Configuration
123
BEC
Package1)
SOT-23
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91
BCW 65
BCW 66
Maximum Ratings
Parameter
Symbol
BCW 65
Values
BCW 66
Collector-emitter voltage
VCE0
Collector-base voltage
VCB0
Emitter-base voltage
VEB0
Collector current
IC
Peak collector current
ICM
Base current
IB
Peak base current
IBM
Total power dissipation, TS = 79 ˚C Ptot
Junction temperature
Tj
Storage temperature range
Tstg
32
60
5
45
75
5
800
1
100
200
330
150
– 65 … + 150
Thermal Resistance
Junction - ambient1)
Junction - soldering point
Rth JA
Rth JS
≤ 285
≤ 215
Unit
V
mA
A
mA
mW
˚C
K/W
1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
|