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BCW65A 반도체 회로 부품 판매점

Surface mount Si-Epitaxial PlanarTransistors



Diotec Semiconductor 로고
Diotec Semiconductor
BCW65A 데이터시트, 핀배열, 회로
BCW 65, BCW 66
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basis-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCB0
VEB0
Ptot
IC
ICM
IB
IBM
Tj
TS
Grenzwerte (TA = 25/C)
BCW 65
BCW 66
32 V
45 V
60 V
75 V
5V
250 mW 1)
800 mA
1000 mA
100 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 32 V
IE = 0, VCB = 32 V, Tj = 150/C
BCW 65
IE = 0, VCB = 45 V
IE = 0, VCB = 45 V, Tj = 150/C
BCW 66
Emitter-Base cutoff current – Emitterreststrom
ICB0
ICB0
ICB0
ICB0
IC = 0, VEB = 4 V
IEB0
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 20 nA
– – 20 :A
– – 20 nA
– – 20 :A
– – 20 nA
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
42
01.11.2003


BCW65A 데이터시트, 핀배열, 회로
General Purpose Transistors
BCW 65, BCW 66
Characteristics (Tj = 25/C)
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
IC = 100 mA, IB = 10 mA
VCEsat
IC = 500 mA, IB = 50 mA
VCEsat
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 100 mA, IB = 10 mA
VBEsat
IC = 500 mA, IB = 50 mA
VBEsat
DC current gain – Kollektor-Basis-Stromverhältnis 1)
BCW 65A / 66F
VCE = 10 V, IC = 100 :A BCW 65B / 66G
BCW 65C / 66H
BCW 65A / 66F
VCE = 1 V, IC = 10 mA
BCW 65B / 66G
BCW 65C / 66H
BCW 65A / 66F
VCE = 1 V, IC = 100 mA
BCW 65B / 66G
BCW 65C / 66H
BCW 65A / 66F
VCE = 2 V, IC = 500 mA
BCW 65B / 66G
BCW 65C / 66H
Gain-Bandwidth Product – Transitfrequenz
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
VCE = 5 V, IC = 50 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 300 mV
– – 700 mV
– – 1.25 V
– – 2V
35 –
50 –
80 –
75 –
110 –
180 –
100 160 250
160 250 400
250 350 630
– 35 –
– 60 –
– 100 –
– 170 MHz –
– 6 pF –
– 60 pF –
RthA 420 K/W 2)
BCW 67, BCW 68
Marking – Stempelung
BCW 65A = EA BCW 65B = EB BCW 65C = EC
BCW 66F = EF BCW 66G = EG BCW 66H = EH
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
43




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BCW65A transistor

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