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Infineon Technologies AG |
NPN Silicon AF Transistor
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 (PNP)
BCW65, BCW66
3
2
1 VPS05161
Type
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
BCW66H
Marking
EAs
EBs
ECs
EFs
EGs
EHs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
2=E
3=C
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 79 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
RthJS
BCW65
BCW66
32 45
60 75
55
800
1
100
200
330
150
-65 ... 150
215
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mA
mW
°C
K/W
1 Jul-10-2001
BCW65, BCW66
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCW65
BCW66
V(BR)CEO
32
45
-
-
V
-
-
Collector-base breakdown voltage
IC = 10 µA, IB = 0
BCW65
BCW66
V(BR)CBO
60
75
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector cutoff current
VCB = 32 V, IE = 0
VCB = 45 V, IE = 0
BCW65
BCW66
ICBO
nA
- - 20
- - 20
Collector cutoff current
VCB = 32 V, IE = 0 , TA = 150 °C
VCB = 45 V, IE = 0 , TA = 150 °C
BCW65
BCW66
ICBO
µA
- - 20
- - 20
Emitter cutoff current
VEB = 4 V, IC = 0
IEBO
- - 20 nA
DC current gain 1)
IC = 100 µA, VCE = 10 V
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
35 -
50 -
80 -
-
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 1 V
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
hFE
hFE-grp.A/F
hFE-grp.B/G
hFE-grp.C/H
75 -
110 -
180 -
-
-
-
100 160 250
160 250 400
250 350 630
1) Pulse test: t ≤ 300µs, D = 2%
2
Jul-10-2001
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