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BCW61C 반도체 회로 부품 판매점

PNP general purpose transistors



NXP Semiconductors 로고
NXP Semiconductors
BCW61C 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCW61 series
PNP general purpose transistors
Product specification
Supersedes data of 1997 May 28
1999 Apr 12


BCW61C 데이터시트, 핀배열, 회로
Philips Semiconductors
PNP general purpose transistors
Product specification
BCW61 series
FEATURES
Low current (max. 100 mA)
Low voltage (max. 32 V).
APPLICATIONS
General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCW60.
MARKING
TYPE NUMBER
BCW61B
BCW61C
BCW61D
MARKING CODE(1)
BB
BC
BD
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
handbook, halfpage
3
1
Top view
1
2
MAM256
3
2
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
32
32
5
100
200
100
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
1999 Apr 12
2




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BCW61C transistor

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