파트넘버.co.kr BCW61BLT1 데이터시트 PDF


BCW61BLT1 반도체 회로 부품 판매점

General Purpose Transistors



Motorola  Inc 로고
Motorola Inc
BCW61BLT1 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW61BLT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
BCW61BLT1
BCW61CLT1
BCW61DLT1
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD
Value
–32
–32
–5.0
–100
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = –1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –32 Vdc)
(VCE = –32 Vdc, TA = 150°C)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICES
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
–32 —
–5.0 —
Vdc
Vdc
— –20 nAdc
— –20 µAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1


BCW61BLT1 데이터시트, 핀배열, 회로
BCW61BLT1 BCW61CLT1 BCW61DLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc)
BCW61B
BCW61C
BCW61D
Symbol
hFE
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BCW61B
BCW61C
BCW61D
(IC = –50 mAdc, VCE = –1.0 Vdc)
BCW61B
BCW61C
BCW61D
AC Current Gain
(VCE = –5.0 Vdc, IC = –2.0 mAdc, f = 1.0 kHz)
BCW61B
BCW61C
BCW61D
Collector – Emitter Saturation Voltage
(IC = –50 mAdc, IB = –1.25 mAdc)
(IC = –10 mAdc, IB = –0.25 mAdc)
Base – Emitter Saturation Voltage
(IC = –50 mAdc, IB = –1.25 mAdc)
(IC = –10 mAdc, IB = –0.25 mAdc)
Base – Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Output Capacitance
(VCE = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(VCE = –5.0 Vdc, IC = –0.2 mAdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = –10 mAdc, IB1 = –1.0 mAdc)
Turn–Off Time
(IB2 = –1.0 mAdc, VBB = –3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 )
hfe
VCE(sat)
VBE(sat)
VBE(on)
Cobo
NF
ton
toff
Min
30
40
100
140
250
380
80
100
100
175
250
350
–0.68
–0.6
–0.6
Max
310
460
630
350
500
700
–0.55
–0.25
–1.05
–0.85
–0.75
6.0
6.0
150
800
Unit
Vdc
Vdc
Vdc
pF
dB
ns
ns
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: Motorola Inc

( motorola )

BCW61BLT1 transistor

데이터시트 다운로드
:

[ BCW61BLT1.PDF ]

[ BCW61BLT1 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BCW61BLT1

General Purpose Transistors - Motorola Inc



BCW61BLT1

General Purpose Transistors(PNP Silicon) - Leshan Radio Company