|
Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW61BLT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
BCW61BLT1
BCW61CLT1
BCW61DLT1
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD
Value
–32
–32
–5.0
–100
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = –1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –32 Vdc)
(VCE = –32 Vdc, TA = 150°C)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)EBO
ICES
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
–32 —
–5.0 —
Vdc
Vdc
— –20 nAdc
— –20 µAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
BCW61BLT1 BCW61CLT1 BCW61DLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µAdc, VCE = –5.0 Vdc)
BCW61B
BCW61C
BCW61D
Symbol
hFE
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
BCW61B
BCW61C
BCW61D
(IC = –50 mAdc, VCE = –1.0 Vdc)
BCW61B
BCW61C
BCW61D
AC Current Gain
(VCE = –5.0 Vdc, IC = –2.0 mAdc, f = 1.0 kHz)
BCW61B
BCW61C
BCW61D
Collector – Emitter Saturation Voltage
(IC = –50 mAdc, IB = –1.25 mAdc)
(IC = –10 mAdc, IB = –0.25 mAdc)
Base – Emitter Saturation Voltage
(IC = –50 mAdc, IB = –1.25 mAdc)
(IC = –10 mAdc, IB = –0.25 mAdc)
Base – Emitter On Voltage
(IC = –2.0 mAdc, VCE = –5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Output Capacitance
(VCE = –10 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(VCE = –5.0 Vdc, IC = –0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = –10 mAdc, IB1 = –1.0 mAdc)
Turn–Off Time
(IB2 = –1.0 mAdc, VBB = –3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990 Ω)
hfe
VCE(sat)
VBE(sat)
VBE(on)
Cobo
NF
ton
toff
Min
30
40
100
140
250
380
80
100
100
175
250
350
—
—
–0.68
–0.6
–0.6
—
—
—
—
Max
—
—
—
310
460
630
—
—
—
350
500
700
–0.55
–0.25
–1.05
–0.85
–0.75
6.0
6.0
150
800
Unit
—
—
Vdc
Vdc
Vdc
pF
dB
ns
ns
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
|